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参数资料
| 型号： | CGY2032TS |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 无绳电话/电话 |
| 英文描述： | DECT 500 mW power amplifier(DECT 500 mW 功率放大器) |
| 中文描述： | TELECOM, CORDLESS, SUPPORT CIRCUIT, PDSO16 |
| 封装： | 4.40 MM , PLASTIC, SOT-369-1, SSOP-16 |
| 文件页数： | 3/12页 |
| 文件大小： | 60K |
| 代理商： | CGY2032TS |
1999 Jul 21
3
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
PINNING
SYMBOL
PIN
DESCRIPTION
V
DD3
GND3
GND3
GND3
V
DD2
GND2
GND2
V
DD1
n.c.
GND1
RFI
GND3
GND3
GND3
OPM
RFO
1
2
3
4
5
6
7
8
9
third stage supply voltage
third stage ground supply
third stage ground supply
third stage ground supply
second stage supply voltage
second stage ground supply
second stage ground supply
first stage supply voltage
not connected
first stage ground supply
PA input
third stage ground supply
third stage ground supply
third stage ground supply
output pre-matching
PA output
10
11
12
13
14
15
16
Fig.2 Pin configuration.
handbook, halfpage
CGY2032TS
MGK734
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VDD3
GND3
GND3
GND3
VDD2
GND2
GND2
VDD1
n.c.
GND1
RFI
GND3
GND3
GND3
OPM
RFO
FUNCTIONAL DESCRIPTION
Amplifier
The CGY2032TS is a 3-stage GaAs power amplifier
capableofdelivering500 mW(typ.)at1.9 GHzintoa 50
load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a DC
path to the supply.
The amplifier can be switched off by means of a single
external PNP or PMOS series switch connected between
the battery and the amplifier drains.
This switch can also be used to vary the actual supply
voltage applied to the amplifier and hence, control the
output power.
This device is specifically designed to work with a duty
factor of 50% and can work up to 100% with good thermal
performance printed-circuit boards.
Biasing
Internal biasing is provided inside the amplifier for
class AB operation.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
On Philips evaluation board.
On Philips evaluation board, P
tot
maximum value is 800 mW.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DD
T
j(max)
P
tot
P
i
T
stg
operating supply voltage
maximum operating junction temperature
total power dissipation
input power
storage temperature
note 1
55
5.2
150
450
15
+125
V
°
C
mW
dBm
°
C
note 2
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