参数资料
型号: CGY353
厂商: INFINEON TECHNOLOGIES AG
英文描述: GaAs MMIC
中文描述: 砷化镓微波单片集成电路
文件页数: 4/6页
文件大小: 130K
代理商: CGY353
GaAs Components
CGY 353
Data Sheet
4
2001-01-01
Electrical Characteristics
Conditions:
V
D
= 7.0 V,
T
A
= 25
°
C,
f
= 3425 - 3450 MHz,
Z
S
=
Z
L
= 50
,
pulsed operation mode, duty cycle = 30%, unless otherwise specified.
Parameters
Symbol
Limit Values
Unit
Test
Conditions
min.
typ.
max.
Supply current
I
DD
I
Pdown
I
G
1.2
A
Power down current
10
mA
Supply current neg.
voltage
1
mA
Gain at nominal
linear output power
G
21
dB
Linear Output Power
P
OUT
Saturation Output
Power
31
dBm
P
IN
= 12 dBm
P
IN
= 14 dBm
P
SAT
33
dBm
Overall Power added
Efficiency
PAE
15
%
P
IN
= 10 dBm
Adjacent channel
power
1)
ACP
30
dBc
±
156 kHz beside
carrier
Input return loss
2)
S11
10
dB
P
IN
= 10 dBm
P
IN
= 10 dBm
Output return loss
S22
8
dB
Noise Figure
NF
5
dB
1)
Modulation:
π
/4 DQPSK with an alpha = 0.4 root raised cosine filtered
Symbol rate: 256 ksymbols/s.
Transmission burst: Each burst has a 500 s nominal duration with 20 dB of raised cosine shaping of 8 s
duration at the beginning and the end of the burst. A maximum of three bursts occur in each 5 ms period, but
consecutive bursts are separated by a minimum interval of 1 ms.
Duty cycle: 30%, 3 bursts per 5 ms frame with a minimum interval of 1 ms between bursts.
The modulation signal has a peak to mean envelope ratio of 3.1 dB.
Values of S11 and S22 with match as realized on application board.
2)
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