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参数资料
| 型号： | CGY92 |
| 厂商： | SIEMENS A G |
| 元件分类： | 衰减器 |
| 英文描述： | GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier) |
| 中文描述： | 900 MHz - 900 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件页数： | 2/14页 |
| 文件大小： | 159K |
| 代理商： | CGY92 |
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Siemens Aktiengesellschaft
HL EH PD 21
pg. 2/14
17.10.95
Functional block diagramm:
Control circuit:
The drain current ID of the CGY 92 is
adjusted by the internal control circuit.
Therefore a negativ voltage (-4V...-6V)
has to be supplied at VG. For transmit
operation VTR must be set to 0V. During
receive operation VTR should be dis-
connected (shut off mode).
Pin #
Configuration
1
VG
Negative voltage at control circuit (-4V...-6V)
2
VTR
Control voltage for transmit mode (0V) or receive mode (open)
3,4,5,10
GND 2
RF and DC ground of the 2nd stage
6,9
GND 1
RF and DC ground of the 1st stage
7
VD1
Positive drain voltage of the 1st stage
8
RFin
RF input power
11
GND 3
Ground for internal output matching
12
VD2, RFout
Positive drain voltage of the 2nd stage, RF output power
DC characteristics
Characteristics
Symbol Conditions
min
typ
max
Unit
Drain current stage 1
IDSS1
VD=3V, VG=0V, VTR n.c.
0.6
0.9
1.2
A
stage 2 IDSS2
2.4
3.5
4.8
A
Drain current with
active current control
ID
VD=3V, VG=-4V, VTR=0V
-
1.0
-
A
Transconductance
gfs1
VD=3V, ID=350mA
0.28
0.32
-
S
(stage 1 and 2)
gfs2
VD=3V, ID=700mA
1.1
1.3
-
S
Pinch off voltage
Vp
VD=3V, ID<500
μ
A
(all stages)
-3.8
-2.8
-1.8
V
Pin (8)
Pout (12)
GND1 (6, 9)
GND2
(3, 4, 5, 10)
VD1 (7)
VD2 (12)
VG (1)
GND3 (11)
Control
Circuit
VTR (2)
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