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参数资料
| 型号： | CIL2482 |
| 厂商： | Continental Device India Limited |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 137K |
| 代理商： | CIL2482 |
NPN SILICON EPITAXIAL TRANSISTOR
CIL2482
TO-237
BCE
High Voltage Switching & Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
VCBO
300
V
Collector -Emitter Voltage
VCEO
300
V
Emitter Base Voltage
VEBO
7.0
V
Collector Current
IC
100
mA
Base Current
IB
50
mA
Collector Power Dissipation
PC
900
mW
Junction and Storage Temperature
Tj,Tstg
-55 to +150
deg C
Range
ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise noted)
CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Cut off Current
ICBO
VCB=240V, IE=0
-
1.0
uA
Emitter Cut off Current
IEBO
VEB=7V, IC=0
-
1.0
uA
DC Current Gain
hFE
IC=4mA, VCE=10V
20
-
IC=20mA, VCE=10V
30
-
150
Collector Emitter Saturation Voltage
VCE(Sat)
IC=10mA,IB=1mA
-
1.0
V
Base Emitter Saturation Voltage
VBE(Sat)
IC=10mA,IB=1mA
-
1.0
V
Transition Frequency
ft
IC=20mA, VCE=10V
50
-
MHz
Collector Output Capacitance
Cob
VCB=20V, IE=0, f=1MHz
-
3.0
-
pF
Continental Device India Limited
Data Sheet
Page 1 of 2
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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