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参数资料
| 型号： | CLLDB3 |
| 厂商： | Continental Device India Limited |
| 英文描述： | SILICON DIAC BIDIRECTIONAL TRIGGER DIODE GLASS PASSIVATED PNPN DEVICE |
| 中文描述： | 硅双向触发二极管DIAC的玻璃钝化PNPN装置 |
| 文件页数： | 1/4页 |
| 文件大小： | 199K |
| 代理商： | CLLDB3 |
SILICON DIAC
CLLDB3
BIDIRECTIONAL TRIGGER DIODE
GLASS PASSIVATED PNPN DEVICE
SOD - 80C
Mini MELF (LL-34)
Functioning as a Trigger Diode with a Fixed Voltage Reference, CLLDB3 can be
used in Conjunction with Triacs for Simplified Gate Control Circuits or as a Starting
Element in Fluorescent Lamp Ballasts
ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise))
SYMBOL
VALUE
UNIT
Power Dissipation on Printed Circuit (L=10mm) (Ta=50
oC)
Ptot
150
mW
Up to Ta = 50
oC and Mounted on a Ceramic Substrate of 10mm x
Ptot
120
mW
10mm x 0.6mm
Repetitive Peak on-State Current (tp=20
s, f=100Hz)
ITRM
2
A
Storage Temperature Range
Tstg
- 40 to +125
C
Junction Temperature Range
Tj
- 40 to +110
C
THERMAL RESISTANCE
Junction to Ambient in free air
400
C/W
Junction-Leads
150
C/W
ELECTRICAL CHARACTERISTICS (Tj=25C unless specified otherwise)
SYMBOL
MIN
MAX
UNIT
* Breakover Voltage
VBO
28
36
V
Breakover Voltage Symmetry
[I+VBOI-I-VBOI]
+ 3
V
* Dynamic Breakover Voltage
I
V+ I
5
V
* Output Voltage
VO
5
V
* Breakover Current
IBO
50
A
* Rise Time
tr
TYP 1.5
s
* Leakage Current
IB
10
A
* Electrical characteristic applicable in both forward and reverse directions
** Connected in parallel with the devices.
DESCRIPTION
TEST CONDITIONS
** C = 22nF
see diagram 1
Rth(j-a)
Rth(j-l)
1=[I
BO to IF=10mA]
see diagram 2
** C = 22nF
DESCRIPTION
see diagram 1
see diagram 3
VB = 0.5 VBO max
see diagram 1
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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