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参数资料
| 型号： | CM100BU-12H |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD H-BRDG 600V 100A U SER |
| 标准包装： | 2 |
| 系列： | IGBTMOD™ |
| 配置： | 全桥反相器 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，100A |
| 电流 - 集电极 (Ic)（最大）： | 100A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 8.8nF @ 10V |
| 功率 - 最大： | 400W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
CM100BU-12H
FOUR IGBTMOD? U-SERIES MODULE
100 AMPERES/600 VOLTS
ABSOLUTE MAXIMUM RATINGS, T j = 25 °C unless otherwise speci?ed
Ratings
JUNCTION TEMPERATURE
STORAGE TEMPERATURE
COLLECTOR-EMITTER VOLTAGE (G-E SHORT)
GATE-EMITTER VOLTAGE (C-E SHORT)
COLLECTOR CURRENT (T C = 25°C)
PEAK COLLECTOR CURRENT (T J ≤ 150°C)
EMITTER CURRENT** (T C = 25°C)
PEAK EMITTER CURRENT**
MAXIMUM COLLECTOR DISSIPATION (T C = 25°C)
MOUNTING TORQUE, M4 MAIN TERMINAL
MOUNTING TORQUE, M5 MOUNTING
WEIGHT
ISOLATION VOLTAGE (MAIN TERMINAL TO BASEPLATE, AC 1 MIN.)
Symbol
T J
T STG
V CES
V GES
I C
I CM
I E
I EM
P C
–
–
–
V ISO
CM100BU-12H
-40 TO 150
-40 TO 125
600
±20
100
200*
100
200*
400
15
31
390
2500
Units
°C
°C
VOLTS
VOLTS
AMPERES
AMPERES
AMPERES
AMPERES
WATTS
IN-LB
IN-LB
GRAMS
VOLTS
* PULSE WIDTH AND REPETITION RATE SHOULD BE SUCH THAT THE DEVICE JUNCTION TEMPERATURE (T J ) DOES NOT EXCEED T J(MAX) RATING.
**REPRESENTS CHARACTERISTICS OF THE ANTI-PARALLEL, EMITTER-TO-COLLECTOR FREE-WHEEL DIODE (FWDI).
STATIC ELECTRICAL CHARACTERISTICS, T j = 25 °C unless otherwise speci?ed
Characteristics
COLLECTOR-CUTOFF CURRENT
GATE LEAKAGE CURRENT
GATE-EMITTER THRESHOLD VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
TOTAL GATE CHARGE
EMITTER-COLLECTOR VOLTAGE*
Symbol
I CES
I GES
V GE(TH)
V CE(SAT)
Q G
V EC
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 10MA, V CE = 10V
I C = 100A, V GE = 15V, T J = 25°C
I C = 100A, V GE = 15V, T J = 125°C
V CC = 300V, I C = 100A, V GE = 15V
I E = 100A, V GE = 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6
2.4
2.6
200
–
Max.
1
0.5
7.5
3.0
–
–
2.6
Units
MA
μ A
VOLTS
VOLTS
VOLTS
NC
VOLTS
* PULSE WIDTH AND REPETITION RATE SHOULD BE SUCH THAT THE DEVICE JUNCTION TEMPERATURE (T J ) DOES NOT EXCEED T J(MAX) RATING.
DYNAMIC ELECTRICAL CHARACTERISTICS, T j = 25 °C unless otherwise speci?ed
Characteristics
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
Symbol
C IES
C OES
C RES
Test Conditions
V CE = 10V, V GE = 0V
Min.
–
–
–
Typ.
–
–
–
Max.
8.8
4.8
1.3
Units
NF
NF
NF
RESISTIVE
LOAD
SWITCH
TIMES
TURN-ON DELAY TIME
RISE TIME
TURN-OFF DELAY TIME
FALL TIME
T D(ON)
T R
T D(OFF)
T F
V CC = 300V, I C = 100A,
V GE1 = V GE2 = 15V,
R G = 6.3 , RESISTIVE
LOAD SWITCHING OPERATION
–
–
–
–
–
–
–
–
100
250
200
300
NS
NS
NS
NS
DIODE REVERSE RECOVERY TIME
DIODE REVERSE RECOVERY CHARGE
T RR
Q RR
I E = 100A, DI E /DT = -200A/ μ S
I E = 100A, DI E /DT = -200A/ μ S
–
–
–
0.24
160
–
NS
μ C
THERMAL AND MECHANICAL CHARACTERISTICS, T j = 25 °C unless otherwise speci?ed
Characteristics
THERMAL RESISTANCE, JUNCTION TO CASE
THERMAL RESISTANCE, JUNCTION TO CASE
CONTACT THERMAL RESISTANCE
Symbol
R TH(J-C) Q
R TH(J-C) D
R TH(C-F)
Test Conditions
PER IGBT 1/4 MODULE
PER FWDI 1/4 MODULE
PER MODULE, THERMAL GREASE APPLIED
Min.
–
–
–
Typ.
–
–
0.025
Max.
0.31
0.7
–
Units
°C/W
°C/W
°C/W
72
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PDF描述 |
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| CM100DU-12F | IGBT MOD DUAL 600V 100A F SER |
| CM100DU-12H | IGBT MOD DUAL 600V 100A U SER |
| CM100DU-24F | IGBT MOD DUAL 1200V 100A F SER |
| CM100DU-24H | IGBT MOD DUAL 1200V 100A U SER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM100BU-12H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM100CF | 功能描述:熔丝座 CAMASTER ADAPT TO FB/BB RoHS:否 制造商:Littelfuse 产品: 电流额定值:30 A 电压额定值:1000 VDC 极数:1 系列: 安装风格:DIN Rail 端接类型: 轴类型: 工作温度范围: |
| CM100DC-24NFM | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM100DU-12F | 功能描述:IGBT MOD DUAL 600V 100A F SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM100DU-12F_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
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