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参数资料
| 型号： | CM100DU-24NFH |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1200V 100A NFH SER |
| 标准包装： | 2 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 6.5V @ 15V，100A |
| 电流 - 集电极 (Ic)（最大）： | 100A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 16nF @ 10V |
| 功率 - 最大： | 560W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2C-5015-ND - KIT DEV BOARD 5A FOR IGBT BG2C-3015-ND - KIT DEV BOARD 3A FOR IGBT BG2A-NFH-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1004 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM100DU-24NFH
Dual IGBTMOD? NFH-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
PC
—
—
—
VISO
CM100DU-24NF
–40 to 150
–40 to 125
1200
±20
100*
200*
100*
200*
560
730
30
40
310
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Symbol
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
Test Conditions
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
VCC = 600V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V
Min.
—
—
4.5
—
—
—
—
Typ.
—
—
6.0
5.0
5.0
450
—
Max.
1.0
0.5
7.5
6.5
—
—
3.5
Units
mA
μA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Cies
Coes
Cres
Test Conditions
VCE = 10V, VGE = 0V
Min.
—
—
—
Typ.
—
—
—
Max.
16
1.3
0.3
Units
nf
nf
nf
Inductive
Turn-on Delay Time
td(on)
—
—
100
ns
Load
Switch
Time
Rise Time
Turn-off Delay Time
Fall Time
tr
td(off)
tf
VCC = 600V, IC = 100A,
VGE1 = VGE2 = 15V, RG = 3.1Ω,
Inductive Load Switching Operation,
—
—
—
—
—
—
50
250
150
ns
ns
ns
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
trr
Qrr
IE = 100A
—
—
—
5.0
150
—
ns
μC
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Rev. 11/09
相关PDF资料 |
PDF描述 |
|---|---|
| CM100DU-34KA | IGBT MOD DUAL 1700V 100A KA SER |
| CM100DUS-12F | IGBT MOD DUAL 600V 100A F SER |
| CM100DY-12H | IGBT MOD DUAL 600V 100A H SER |
| CM100DY-24A | IGBT MOD DUAL 1200V 100A A SER |
| CM100DY-24H | IGBT MOD DUAL 1200V 100A H SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM100DU-24NFH_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM100DU-24NFH_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM100DU-34KA | 功能描述:IGBT MOD DUAL 1700V 100A KA SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM100DU-34KA_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM100DU-34KA_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
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