参数资料
型号: CM100DUS-12F
厂商: Powerex Inc
文件页数: 4/4页
文件大小: 0K
描述: IGBT MOD DUAL 600V 100A F SER
标准包装: 2
系列: IGBTMOD™
IGBT 类型: 沟道
配置: 半桥
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.7V @ 15V,100A
电流 - 集电极 (Ic)(最大): 100A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 27nF @ 10V
功率 - 最大: 350W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
CM100DUS-12F
TRENCH GATE DESIGN DUAL IGBTMOD?
100 AMPERES/600 VOLTS
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, V GE
10 3
10 2
V CC = 300V
V GE = 15V
R G = 6.3 ?
T J = 125°C
T D(OFF)
T F
T D(ON)
10 2
10 1
V CC = 300V
V GE = 15V
R G = 6.3 ?
T J = 125°C
T RR
I RR
T RR
I RR
10 2
10 1
20
16
12
I C = 100A
V CC = 200V
V CC = 300V
10 1
T R
8
4
10 0
10 0
10 1
10 2
10 0
10 0
10 1
10 0
10 2
0
0 100 200 300 400 500 600 700 800 900
COLLECTOR CURRENT, I C , (AMPERES)
EMITTER CURRENT, I E , (AMPERES)
GATE CHARGE, Q G , (NC)
10 -3
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
10 1
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
10 1
V CC = 300V
V GE = 15V
I C = 100A
T J = 125°C
INDUCTIVE LOAD
10 1
10 0
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
( IGBT)
10 -2 10 -1 10 0
SINGLE PULSE
T C = 25C
PER UNIT BASE = R TH(J-C) = 0.35°C/W
10 1
C SNUBBER AT BUS
10 0
V CC = 300V
V GE = 15V
R G = 6.2 ?
T J = 125°C
INDUCTIVE LOAD
10 0
10 -1
10 -2
10 -1
10 -2
10 -1
10 1
10 2
C SNUBBER AT BUS
10 3
10 -1
10 0
10 1
10 2
10 -3
10 -5
10 -4
10 -3
10 -3
EMITTER CURRENT, I E , (AMPERES)
GATE RESISTANCE, R G , ()
TIME, (S)
10 1
10 -3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDI)
10 -2 10 -1 10 0
SINGLE PULSE
10 1
10 0
10 -1
10 -2
T C = 25C
PER UNIT BASE = R TH(J-C) = 0.7°C/W
10 -1
10 -2
10 -3
10 -5
10 -4
10 -3
10 -3
TIME, (S)
4
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CM100DY-12H 功能描述:IGBT MOD DUAL 600V 100A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B