- 您现在的位置：买卖IC网 > Datasheet目录615 > CM100DY-28H (Powerex Inc)IGBT MOD DUAL 1400V 100A H SER Datasheet资料下载
参数资料
| 型号： | CM100DY-28H |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1400V 100A H SER |
| 标准包装： | 2 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1400V |
| Vge, Ic时的最大Vce（开）： | 4.2V @ 15V，100A |
| 电流 - 集电极 (Ic)（最大）： | 100A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 20nF @ 10V |
| 功率 - 最大： | 780W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DY-28H
Dual IGBTMOD? H-Series Module
100 Amperes/1400 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current
Peak Collector Current
Emitter Current
Emitter Current-Pulse
Maximum Collector Dissipation
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E *
I EM *
P c
–
–
–
V RMS
CM100DY-28H
–40 to 150
–40 to 125
1400
± 20
100
200**
100
200**
780***
17
26
270
2500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* I E , V EC , T rr , Q rr & di E /dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
** Pulse width and repetition rate should be such that the device junction temp. (T j ) does not exceed T j(max) rating.
*** Junction temperature (T j ) should not increase beyond 150 ° C.
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 10mA, V CE = 10V
I C = 100A, V GE = 15V
I C = 100A, V GE = 15V, T j = 125 ° C
V CC = 800V, I C = 100A, V GE = 15V
Min.
–
–
5.0
–
–
–
Typ.
–
–
6.5
3.1
2.95
510
Max.
1.0
0.5
8.0
4.2*
–
–
Units
mA
μ A
Volts
Volts
Volts
nC
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V GE = 0V, V CE = 10V
Min.
–
–
–
Typ.
–
–
–
Max.
20
7
4
Units
nF
nF
nF
Resistive
Turn-on Delay Time
t d(on)
–
–
250
ns
Load
Switching
Times
Rise Time
Turn-off Delay Time
Fall Time
t r
t d(off)
t f
V CC = 800V, I C = 100A,
V GE1 = V GE2 = 15V, R G = 3.1 ?
–
–
–
–
–
–
400
300
500
ns
ns
ns
Diode Reverse Recovery Time
Emitter-Collector Voltage
Diode Reverse Recovery Charge
t rr
V EC
Q rr
I E = 100A, di E /dt = –300A/ μ s
I E = 100A, V GE = 0V
I E = 100A, di E /dt = –300A/ μ s
–
–
–
–
–
1.0
300
3.8
–
ns
V
μ C
Thermal and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R th(j-c)
R th(j-c)
R th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.16
0.35
0.13
Units
° C/W
° C/W
° C/W
2
相关PDF资料 |
PDF描述 |
|---|---|
| CM100DY-34A | IGBT MOD DUAL 1700V 100A A SER |
| CM100E3U-12H | IGBT MOD CHOP 600V 100A U SER |
| CM100E3U-24H | IGBT MOD CHOP 1200V 100A U SER |
| CM100MX-12A | CIB MOD 600V 100A NX SER |
| CM100RL-12NF | IGBT MOD 7PAC 600V 100A NF SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM100DY-34A | 功能描述:IGBT MOD DUAL 1700V 100A A SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM100-E0000B | 功能描述:以太网模块 Cobox Mini Device Server 10/100 2-TTL RoHS:否 制造商:Lantronix 产品:Device Servers 数据速率:300 bps to 921.6 kbps, 10 Mbps, 100 Mbps 接口类型:Ethernet, Serial 工作电源电压:5 V to 15 V 工作电源电流:133 mA to 400 mA 最大工作温度:+ 70 C |
| CM100E3U-12H | 功能描述:IGBT MOD CHOP 600V 100A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM100E3U-12H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM100E3U24H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 100A I(C) |
发布紧急采购，3分钟左右您将得到回复。