参数资料
型号: CM100TF-12H
厂商: Powerex Inc
文件页数: 1/4页
文件大小: 0K
描述: IGBT MOD 6PAC 600V 100A H SER
标准包装: 1
系列: IGBTMOD™
配置: 三相反相器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.8V @ 15V,100A
电流 - 集电极 (Ic)(最大): 100A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 10nF @ 10V
功率 - 最大: 400W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
CM100TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six-IGBT IGBTMOD?
H-Series Module
100 Amperes/600 Volts
A
C
S
X
Q X
Q X
N
Z - M4 THD
(7 TYP.)
B u P E u P
B v P E v P
B w P E w P
B u N E u N
B v N E v N
B w N E w N
P
P
D
U
G
N
P
N
U
V
W
T
N
R
K
G
J
E
B
W
AA
L
M
M
AA
L
Y DIA. (4 TYP.)
Description:
Powerex IGBTMOD? Modules
are designed for use in switching
.110 TAB
V
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
F
H
AB
P
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
BuP
BvP
BwP
bly and thermal management.
P
EuP
EvP
EwP
Features:
□ Low Drive Power
BuN
BvN
BwN
N
□ Low V CE(sat)
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
N
EuN
u
EvN
v
EwN
w
□ High Frequency Operation
(20-25kHz)
Outline Drawing and Circuit Diagram
□ Isolated Baseplate for Easy
Heat Sinking
Dimensions
A
B
C
D
E
Inches
4.02 ± 0.02
3.58 ± 0.02
3.15 ± 0.01
2.913 ± 0.01
1.69
Millimeters
102 ± 0.5
91.0 ± 0.5
80.0 ± 0.25
74.0 ± 0.25
43.0
Dimensions
P
Q
R
S
T
Inches
0.65
0.55
0.47
0.43
0.39
Millimeters
16.5
14.0
12.0
11.0
10.0
Applications:
□ AC Motor Control
Motion/Servo Control
□ UPS
□ Welding Power Supplies
Laser Power Supplies
Ordering Information:
F
1.18+0.06/-0.02 30.0+1.5/-0.5
U
0.33
8.5
Example: Select the complete part
G
H
J
K
1.18
1.16
1.06
0.96
30.0
29.5
27.0
24.5
V
W
X
Y
0.32
0.24 Rad.
0.24
0.22 Dia.
8.1
Rad. 6.0
6.0
Dia. 5.5
module number you desire from
the table below -i.e. CM100TF-12H
is a 600V (V CES ), 100 Ampere
Six-IGBT IGBTMOD? Power
Module.
L
M
N
0.87
0.79
0.67
22.0
20.0
17.0
Z
AA
AB
M4 Metric
0.08
0.28
M4
2.0
7.0
Type
CM
Current Rating
Amperes
100
V CES
Volts (x 50)
12
315
相关PDF资料
PDF描述
CM100TF-24H IGBT MOD 6PAC 1200V 100A H SER
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CM100TL-12NF IGBT MOD 6PAC 600V 100A NF SER
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相关代理商/技术参数
参数描述
CM100TF-24 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
CM100TF-24H 功能描述:IGBT MOD 6PAC 1200V 100A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM100TF28H 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.4KV V(BR)CES | 100A I(C)
CM100TF-28H 功能描述:IGBT MOD 6PAC 1400V 100A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM100TJ-12F 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Trench Gate Design 100 Amperes/600 Volts