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| 型号： | CM100TF-24H |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD 6PAC 1200V 100A H SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 三相反相器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3.4V @ 15V，100A |
| 电流 - 集电极 (Ic)（最大）： | 100A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 20nF @ 10V |
| 功率 - 最大： | 780W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-24H
Six-IGBT IGBTMOD? H-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M5 Mounting Screws
Module Weight (Typical)
V Isolation
Symbol
T j
T stg
V CES
V GES
I C
I CM
I F
I FM
P d
–
–
–
V RMS
CM100TF-24H
–40 to 150
–40 to 125
1200
± 20
100
200*
100
200*
780
17
17
830
2500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V FM
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 10mA, V CE = 10V
I C = 100A, V GE = 15V
I C = 100A, V GE = 15V, T j = 150 ° C
V CC = 600V, I C = 100A, V GS = 15V
I E = 100A, V GS = 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.5
2.25
500
–
Max.
1.0
0.5
7.5
3.4**
–
–
3.4
Units
mA
μ A
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V GE = 0V, V CE = 10V, f = 1MHZ
Min.
–
–
–
Typ.
–
–
–
Max.
20
7
4
Units
nF
nF
nF
Resistive
Turn-on Delay Time
t d(on)
–
–
250
ns
Load
Switch
Times
Rise Time
Turn-off Delay Time
Fall Time
t r
t d(off)
t f
VCC = 600V, IC = 100A,
V GE1 = V GE2 = 15V, R G = 3.1 ?
–
–
–
–
–
–
350
300
350
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t rr
Q rr
I E = 100A, di E /dt = –200A/ μ s
I E = 100A, di E /dt = –200A/ μ s
–
–
–
0.74
250
–
ns
μ C
Thermal and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R th(j-c)
R th(j-c)
R th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.16
0.35
0.025
Units
° C/W
° C/W
° C/W
344
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PDF描述 |
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| CM100TF-28H | IGBT MOD 6PAC 1400V 100A H SER |
| CM100TL-12NF | IGBT MOD 6PAC 600V 100A NF SER |
| CM100TL-24NF | IGBT MOD 6PAC 1200V 100A NF SER |
| CM100TU-12F | IGBT MOD 6PAC 600V 100A F SER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM100TF28H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.4KV V(BR)CES | 100A I(C) |
| CM100TF-28H | 功能描述:IGBT MOD 6PAC 1400V 100A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM100TJ-12F | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Trench Gate Design 100 Amperes/600 Volts |
| CM100TJ-24F | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts |
| CM100TL-12NF | 功能描述:IGBT MOD 6PAC 600V 100A NF SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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