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参数资料
| 型号： | CM1210-08MS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| 封装： | MSOP-10 |
| 文件页数： | 8/13页 |
| 文件大小： | 483K |
| 代理商： | CM1210-08MS |
2005 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
04/07/05
CM1210
Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: From I/O pins to VP or VN only. VP bypassed to VN with a 0.22μF ceramic capacitor (see Application Information for more
details).
Note 4: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 3.3V, VN grounded.
Note 5: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
S
IP
Supply Current
(VP-VN)=3.3V
8.0
μA
VF
Diode Forward Voltage
Top Diode
Bottom Diode
IF = 8mA
0.60
0.80
0.95
V
ILEAK
Channel Leakage Current
±0.1
±1.0
μA
CIN
Channel Input Capacitance
At 1 MHz, VP=3.3V, VN=0V,
VIN=1.65V; Note 2 applies
1.0
1.3
pF
VESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per IEC
61000-4-2 standard
Notes 2,3 and 5; TA=25°C
±6kV
VCL
Channel Clamp Voltage
CM1210-01ST, CM1210-01SC,
CM1210-02ST, CM1210-02SC
Positive Transients
Negative Transients
At 8kV ESD HBM; Notes 2 & 4
VP + 10.0
VN - 10.0
V
Channel Clamp Voltage
CM1210-04ST, CM1210-08MS
Positive Transients
Negative Transients
At 8kV ESD HBM; Notes 2 & 4
VP + 13.0
VN - 13.0
V
Obsolete
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