参数资料
| 型号： | CM1213-06MR |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY ESD PROT LOW 6CH 8MSOP |
| 标准包装： | 4,000 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 6V |
| 电极标记： | 6 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
CM1213
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Supply Voltage (V P ? V N )
Operating Temperature Range
Storage Temperature Range
DC Voltage at any channel input
Rating
6.0
? 40 to +85
? 65 to +150
(V N ? 0.5) to (V P + 0.5)
Units
V
° C
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Package Power Rating
MSOP ? 8 Package (CM1213 ? 06MR)
MSOP ? 10 Package (CM1213 ? 08MR)
SOIC ? 8 Package (CM1213 ? 06SM)
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Rating
? 40 to +85
400
400
600
Units
° C
mW
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V P
I P
Operating Supply Voltage (V P ? V N )
Operating Supply Current
(V P ? V N ) = 3.3 V
3.3
5.5
8.0
V
m A
V F
I LEAK
C IN
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
I F = 8 mA; T A = 25 ° C
T A = 25 ° C; V P = 5 V, V N = 0 V
At 1 MHz, V P = 3.3 V, V N = 0 V, V IN = 1.65 V
0.60
0.60
0.80
0.80
± 0.1
1.0
0.95
0.95
± 1.0
1.5
V
m A
pF
D C IN
C MUTUAL
V ESD
V CL
R DYN
Channel Input Capacitance Matching
Mutual Capacitance between signal pin
and adjacent signal pin
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 61000 ? 4 ? 2 standard
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive Transients
Negative Transients
At 1 MHz, V P = 3.3 V, V N = 0 V, V IN = 1.65 V
At 1 MHz, V P = 3.3 V, V N = 0 V, V IN = 1.65 V
T A = 25 ° C (Notes 3 and 4)
T A = 25 ° C, I PP = 1 A, t P = 8/20 m S
(Note 4)
I PP = 1 A, t P = 8/20 m S
Any I/O pin to Ground (Note 4)
± 8
0.02
0.11
+8.8
? 1.4
0.7
0.4
pF
pF
kV
V
W
1.
2.
3.
4.
All parameters specified at T A = ? 40 ° C to +85 ° C unless otherwise noted.
Human Body Model per MIL ? STD ? 883, Method 3015, C Discharge = 100 pF, R Discharge = 1.5 K W , V P = 3.3 V, V N grounded.
Standard IEC 61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330 W , V P = 3.3 V, V N grounded.
These measurements performed with no external capacitor on V P (V P floating).
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM1213-06MS | 制造商:CALMIRCO 制造商全称:California Micro Devices Corp 功能描述:1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays |
| CM1213-06SM | 功能描述:ESD 抑制器 6-Channel ESD Protection Array RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| CM1213-06SN | 制造商:CALMIRCO 制造商全称:California Micro Devices Corp 功能描述:1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays |
| CM1213-08MR | 功能描述:ESD 抑制器 8-Channel ESD Protection Array RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| CM1213-08MS | 制造商:CALMIRCO 制造商全称:California Micro Devices Corp 功能描述:1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays |
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