参数资料
| 型号： | CM1230-08CP |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY ESD LO CAP 8CH 10WLCSP |
| 标准包装： | 3,500 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 6V |
| 电极标记： | 8 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-WFBGA，WLCSP |
| 供应商设备封装： | 10-WLCSP |
| 包装： | 带卷 (TR) |
| 其它名称： | CM1230-08CP-ND CM1230-08CPOSTR |
CM1230
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Supply Voltage (V P ? V N )
Operating Temperature Range
Storage Temperature Range
DC Voltage at any Channel Input
Rating
6.0
–40 to +85
–65 to +150
(V N ? 0.5) to (V P + 0.5)
Units
V
° C
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note2)
Rating
–40 to +85
Units
° C
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V P
I P
Operating Supply Voltage (V P ? V N )
Operating Supply Current
(V P ? V N ) = 3.3 V
3.3
5.5
8.0
V
m A
V F
I LEAK
C IN
D C IN
C MUTUAL
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
Channel Input Capacitance Matching
Mutual Capacitance between signal pin
and adjacent signal pin
I F = 8 mA; T A = 25 ° C
T A = 25 ° C; V P = 5 V, V N = 0 V, V IN = 0 V to 5 V
At 1 MHz, V P = 3.3 V, V N = 0 V, V IN = 1.65 V
At 1 MHz, V P = 3.3 V, V N = 0 V, V IN = 1.65 V
At 1 MHz, V P = 3.3 V, V N = 0 V, V IN = 1.65 V
0.60
0.60
0.80
0.80
± 0.1
0.80
0.02
0.15
0.95
0.95
± 1.0
1.2
V
m A
pF
pF
pF
V ESD
In ? system ESD Protection
Peak Discharge Voltage at any
channel input, in system
kV
a) Contact discharge per
IEC 61000 ? 4 ? 2 standard
b) Human Body Model,
MIL ? STD ? 883, Method 3015
T A = 25 ° C (Notes 4 and 5)
T A = 25 ° C (Notes 3 and 5)
± 8
± 15
V CL
R DYN
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive Transients
Negative Transients
T A = 25 ° C, I PP = 1A, t P = 8/20 m S
(Note 5)
I PP = 1 A, t P = 8/20 m S
Any I/O pin to Ground (Note 5)
+9.8
–1.8
0.76
0.56
V
W
2.
3.
4.
5.
6.
All parameters specified at T A = –40 ° C to +85 ° C unless otherwise noted.
Human Body Model per MIL ? STD ? 883, Method 3015, C Discharge = 100 pF, R Discharge = 1.5 K W , V P = 3.3 V, V N grounded.
Standard IEC 61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330 W , V P = 3.3 V, V N grounded.
These measurements performed with no external capacitor on V P .
Measured under pulsed conditions, pulse width = 0.7 ms, maximum current = 1.5 A.
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