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参数资料
| 型号： | CM1248-04QG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS ESD PROT LO CAP 4CH 6UDFN |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 5.5V |
| 电压 - 击穿： | 6.8V |
| 电极标记： | 2 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN |
| 供应商设备封装： | 6-UDFN（1.25x1） |
| 包装： | 带卷 (TR) |
CM1248 ? 04QG
PACKAGE / PINOUT DIAGRAMS
Top View
Pin 1
Pin 2
Pin 3
Pin 6
Pin 5
Pin 4
6 ? Lead uDFN (.4 mm)
CM1248 ? 04QG
Table 1. PIN DESCRIPTIONS
Pins
(Refer to package / pinout diagrams)
(Refer to package / pinout diagrams)
Name
CHx
V N
Description
The cathode of the respective TVS diode, which should be connected to the node
requiring transient voltage protection.
The anode of the TVS diodes.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
Rating
? 65 to +150
Units
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature
Table 4. E LECTRICAL OPERATING CHARACTERISTIC S (Note 1)
Rating
? 40 to +85
Units
° C
Symbol
C IN
Parameter
Channel Input Capacitance
Conditions
T A = 25 ° C, 0 VDC, 1 MHz; Note 2
Min
Typ
10
Max
Units
pF
0 VDC, 1 MHz; Note 1
7
15
pF
D C IN
V RSO
I LEAK
V SIG
V ESD
R D
Differential Channel I/O to GND Capacitance
Reverse Stand ? off Voltage
Leakage Current
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
ESD Withstand Voltage
Contact Discharge per IEC 61000 ? 4 ? 2 standard
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
T A = 25 ° C, 2.5 VDC, 1 MHz; Note 2
I R = 10 m A, T A = 25 ° C
I R = 1 mA, T A = 25 ° C
V IN = 5.0 VDC, T A = 25 ° C
V IN = 5.0 VDC, Note 1
I = 10 mA, T A = 25 ° C
I = ? 10 mA, T A = 25 ° C
T A = 25 ° C
(Notes 2, 4 and 5)
T A = 25 ° C
(Notes 2 and 3)
5.5
6.1
± 15
0.19
6.8
? 0.89
0.57
1.36
0.25
0.75
pF
V
V
m A
m A
V
kV
W
1.
2.
3.
4.
5.
All parameters specified at T A = ? 40 ° C to +85 ° C unless otherwise noted.
These parameters guaranteed by design and characterization.
Human Body Model per MIL ? STD ? 883, Method 3015, C Discharge = 100 pF, R Discharge = 1.5 K W , V N grounded.
Standard IEC 61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330 W , V N grounded.
These measurements performed with no external capacitor on Pin X .
http://onsemi.com
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM1248-04S9 | 功能描述:TVS二极管阵列 4-ch ESD Protection RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CM1248-08DE | 功能描述:TVS二极管阵列 8-Ch.10pF typ 2 DIE Low Capacitance RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CM12-48C | 制造商: 功能描述: 制造商:undefined 功能描述: |
| CM1249-04S9 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Transient Voltage Suppressors/ESD Protectors |
| CM124J | 制造商:Panasonic Electric Works 功能描述: |
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