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| 型号： | CM1263-06DE |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | ESD PROT LOW CAP 6CH 12DFN |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 6V |
| 电极标记： | 6 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-UFDFN 裸露焊盘 |
| 供应商设备封装： | 12-UDFN |
| 包装： | 带卷 (TR) |
CM1263 ? 06DE
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Supply Voltage (V P ? V N )
Operating Temperature Range
Storage Temperature Range
DC Voltage at any channel input
Rating
6.0
? 40 to +85
? 65 to +150
(V N ? 0.5) to (V P + 0.5)
Units
V
° C
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. E LECTRICAL OPERATING CHARACTERISTIC S (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V P
I P
Operating Supply Voltage (V P ? V N )
Operating Supply Current
V P = 3.3 V, V N = 0 V (per V P pin)
3.3
5.5
8.0
V
m A
V F
I LEAK
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
T A = 25 ° C, I F = 8 mA, V P = 3.3 V,
V N = 0 V
T A = 25 ° C; V P = 3.3 V, V N = 0 V
(Channel 1)
0.60
0.60
0.80
0.80
0.95
0.95
250
V
nA
V P = 3.3 V, V N = 0 V
(Channels 1 ? 6)
1000
nA
I R
Reverse (Leakage Current)
V P = floating; V N = 0 V
(per channel)
1000
nA
C IN
D C IN
C MUTUAL
V ESD
V CL
R DYN
Channel Input Capacitance
Channel Input Capacitance Matching
Mutual Capacitance between signal pin
and adjacent signal pin
ESD Protection
Peak Discharge Voltage at any channel
input, in system
a) Contact discharge per
IEC 61000 ? 4 ? 2 standard
b) Air discharge per
IEC 61000 ? 4 ? 2 standard
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive Transients
Negative Transients
At 1 MHz, V P = 3.3 V, V N = 0 V,
V IN = 0 V
At 1 MHz, V P = 3.3 V, V N = 0 V,
V IN = 0 V
At 1 MHz, V P = 3.3 V, V N = 0 V,
V IN = 0 V
T A = 25 ° C (Notes 2 and 3)
T A = 25 ° C, I PP = 1 A, t P = 8/20 m S
(Note 3)
T A = 25 ° C, I PP = 1 A, t P = 8/20 m S
Any I/O pin to Ground (Note 3)
± 8
± 15
0.88
0.02
0.11
+9.96
–1.6
0.96
0.5
1.2
pF
pF
pF
kV
V
W
1. All parameters specified at T A = –40 ° C to +85 ° C unless otherwise noted.
2. Standard IEC 61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330 W , V P = 3.3 V, V N grounded.
3. These measurements performed with no external capacitor on V P (V P floating).
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