参数资料
型号: CM1422-03CP
厂商: ON Semiconductor
文件页数: 3/11页
文件大小: 0K
描述: IC EMI FILTER ARRAY 8CH 20WLCSP
标准包装: 3,500
类型: 低通
技术: RC(Pi)
通道数: 8
中心 / 截止频率: 120MHz(截止值)
衰减值: 30dB @ 1GHz ~ 3GHz
电阻 - 通道 (Ohms): 100
值: R = 100 欧姆,C = 15pF
ESD 保护:
滤波器阶数: 2nd
应用: 移动设备的数据线路
封装/外壳: 20-WFBGA,WLCSP
尺寸/尺寸: 0.157" L x 0.057" W(4.00mm x 1.46mm)
高度: 0.028"(0.71mm)
包装: 带卷 (TR)
工作温度: -40°C ~ 85°C
其它名称: CM1422-03CP-ND
CM1422-03CPOSTR
CM1420, CM1422
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Parameter
Rating
? 65 to +150
100
500
Units
° C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Rating
? 40 to +85
Units
° C
Symbol
R
C
V DIODE
I LEAK
V SIG
V ESD
Parameter
Resistance
Capacitance
Diode Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In ? system ESD Withstand Voltage
a) Human Body Model, MIL ? STD ? 883, Method 3015
b) Contact Discharge per IEC 61000 ? 4 ? 2 Level 4
Conditions
At 2.5 V DC, 1 MHz,
30 mV AC
I DIODE = 10 m A
V DIODE = 3.3 V
I LOAD = 10 mA
(Note 3)
(Note 2)
Min
80
12
5.6
? 1.5
± 30
± 15
Typ
100
15
6.0
100
6.8
? 0.8
Max
120
18
200
9.0
? 0.4
Units
W
pF
V
nA
V
kV
R DYN
Dynamic Resistance
Positive
Negative
2.30
0.90
W
f C
Cut ? off Frequency
Z SOURCE = 50 W , Z LOAD = 50 W
R = 100 W , C = 15 pF
120
MHz
1. T A = 25 ° C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping
voltage is measured at Pin C1.
http://onsemi.com
3
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