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| 型号： | CM1461-08DE |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC EMI FILTER 8CH ESD 16-WFDFN |
| 产品变化通告： | Product Discontinuation 27/Jan/2012 |
| 标准包装： | 1 |
| 系列： | Praetorian® |
| 类型： | 低通 |
| 技术： | LC（Pi） |
| 通道数： | 8 |
| 衰减值： | 30dB @ 800MHz ~ 2.7GHz |
| 电流： | 30mA |
| 值： | L = 20nH（总计），C = 10pF |
| ESD 保护： | 是 |
| 滤波器阶数： | 3rd |
| 应用： | 移动设备的数据线路 |
| 封装/外壳： | 16-WFDFN 裸露焊盘 |
| 尺寸/尺寸： | 0.157" L x 0.063" W（4.00mm x 1.60mm） |
| 高度： | 0.031"（0.80mm） |
| 包装： | 标准包装 |
| 工作温度： | -40°C ~ 85°C |
| 其它名称： | CM1461-08DEOSDKR |
CM1461
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
Current per Inductor
DC Package Power Rating
Rating
? 65 to +150
30
500
Units
° C
mA
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Rating
–40 to +85
Units
° C
Symbol
Parameter
Conditions
Min
Typ
Max
Units
L
Channel Inductance
20
nH
C TOTAL
C
V DIODE
I LEAK
V SIG
V ESD
Total Channel Capacitance
Capacitance C1
Stand ? off Voltage
Diode Leakage Current (Reverse Bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In ? system ESD Withstand Voltage
a) Human Body Model, MIL ? STD ? 883,
Method 3015
b) Contact Discharge per
IEC 61000 ? 4 ? 2 Level 4
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
I DIODE = 10 m A
V DIODE = 3.3 V
I LOAD = 10 mA
I LOAD = ? 10 mA
(Notes 2 and 3)
16
5.6
? 1.5
± 30
± 15
20
10
6.0
0.1
6.8
? 0.8
24
1.0
9.0
? 0.4
pF
pF
V
m A
V
kV
R DYN
f R
Dynamic Resistance
Positive
Negative
Roll ? off Frequency at ? 6 dB Attenuation
Z SOURCE = 50 W , Z LOAD = 50 W
2.3
0.9
400
W
MHz
1. T A = 25 ° C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin (i.e. if ESD is applied to pin A1 then clamping voltage is
measured at pin C1). Unused pins are left open.
http://onsemi.com
3
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