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参数资料
| 型号： | CM1485-02SE |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | IC LCD/CAM EMI FLTR 2CH SOT563-6 |
| 产品变化通告： | CMD Product Obsolescence 16/Mar/2011 |
| 标准包装： | 5,000 |
| 类型： | 低通 |
| 技术： | RC（Pi） |
| 通道数： | 2 |
| 中心 / 截止频率： | 125MHz（截止值） |
| 衰减值： | 30dB @ 800MHz ~ 1GHz |
| 电阻 - 通道 (Ohms)： | 100 |
| 值： | R = 100 欧姆，C = 12pF |
| ESD 保护： | 是 |
| 滤波器阶数： | 2nd |
| 应用： | 移动设备的数据线路 |
| 封装/外壳： | SOT-563，SOT-666 |
| 尺寸/尺寸： | 0.063" L x 0.047" W（1.60mm x 1.20mm） |
| 高度： | 0.024"（0.60mm） |
| 包装： | 带卷 (TR) |
| 工作温度： | -40°C ~ 85°C |
CM1485
Table 1. PIN DESCRIPTIONS
6 ? Lead SOT ? 563 Package
PACKAGE / PINOUT DIAGRAMS
Top View
Pin
Name
Description
CH1
1
5
CH2
1
FILTER1
Filter + ESD Channel 1
2
GND
Ground (Note 1)
GND
2
5
GND
3
FILTER1
Filter + ESD Channel 1
4
FILTER2
Filter + ESD Channel 2
CH1
3
4
CH2
5
6
GND
FILTER2
Ground (Note 1)
Filter + ESD Channel 2
6 ? Lead SOT ? 563
1. Pin 2 and Pin 5 must be well grounded at the same time.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Rating
? 65 to +150
100
0.15
Units
° C
mW
W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Rating
–40 to +85
Units
° C
Symbol
R
C TOTAL
I LEAK
V BR
V ESD
Parameter
Resistance
Total Channel Capacitance
Diode Leakage Current (Reverse Bias)
Breakdown Voltage
Positive Clamp
In ? system ESD Withstand Voltage
a) Human Body Model, MIL ? STD ? 883,
Method 3015
b) Contact Discharge per
IEC 61000 ? 4 ? 2 Level 4
Conditions
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
V DIODE = +3.0 V
I LOAD = 1 mA
(Note 2)
Min
90
19.2
6.0
± 30
± 15
Typ
100
24.0
7.0
Max
110
28.8
1.0
Units
W
pF
m A
V
kV
R DYN
f C
Dynamic Resistance
Positive
Negative
Cut ? off Frequency
Z SOURCE = 50 W , Z LOAD = 50 W
2.3
0.9
125
W
MHz
A 1GHz
A 800MHz ? 6GHz
Absolute Attenuation @ 1 GHz from 0 dB Level
Absolute Attenuation @ 800 MHz to 1 GHz
from 0 dB Level
Z SOURCE = 50 W , Z LOAD = 50 W,
DC Bias = 0 V (Notes 1 and 3)
Z SOURCE = 50 W , Z LOAD = 50 W,
DC Bias = 0 V (Notes 1 and 3)
35
30
dB
dB
1. T A = 25 ° C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Attenuation / RF curves characterized by a network analyzer using microprobes.
http://onsemi.com
2
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