参数资料
型号: CM150TL-12NF
厂商: Powerex Inc
文件页数: 1/4页
文件大小: 0K
描述: IGBT MOD 6PAC 600V 150A NF SER
标准包装: 1
系列: IGBTMOD™
配置: 三相反相器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.2V @ 15V,150A
电流 - 集电极 (Ic)(最大): 150A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 23nF @ 10V
功率 - 最大: 730W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
CM150TL-12NF
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Six IGBTMOD?
NF-Series Module
150 Amperes/600 Volts
E
A
F
G
H
D
J
J
M
K
N
8
1
1
1
1
C
B
CN
UP
VP
WP
K
P
B
AA
U
V
AB
W
N
L
U
T
S
K
R
K
R
K
R
K
Q
P
Description:
Powerex IGBTMOD? Modules
are designed for use in switching
applications. Each module
V
K
X
W
consists of six IGBT Transistors in
a three phase bridge configuration,
P
Y
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
B
CN-7
CN-8
N
NC
NC
NC
UP-1
UP-2
U
CN-5
CN-6
VP-1
VP-2
V
CN-3
CN-4
WP-1
WP-2
W
CN-1
CN-2
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V CE(sat)
£ Discrete Super-Fast Recovery
Outline Drawing and Circuit Diagram
Free-Wheel Diode
£ Isolated Baseplate for Easy
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
Heat Sinking
A
B
C
D
E
F
G
4.72
2.17
1.39
4.17±0.02
0.43
0.28
0.54
120.0
55.0
35.0
106.0±0.5
11.0
7.0
13.62
N
P
Q
R
S
T
U
1.23 32.0
0.47 11.75
0.53 13.5
0.91 23.0
0.87 22.0
0.76 19.75
0.42 10.75
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Photovoltaic/Fuel Cell
Ordering Information:
H
J
1.61
0.67
40.78
17.0
V 0.87+0.04/-0.02 22.0+1.0/-0.5
W 0.91 23.2
Example: Select the complete
module number you desire from
K
0.47
12.0
X
0.63 16.0
the table below -i.e.
L
M
M5
0.22 Dia.
M5
Dia. 5.5
Y
0.12
3.0
CM150TL-12NF is a 600V (V CES ),
150 Ampere Six-IGBTMOD? Pow-
Housing Types (J.S.T. Mfg. Co. Ltd.)
er Module.
AA – B8P-VH-FB-B
AB – B2P-VH-FB-B
10/10 Rev. 1
Type
CM
Current Rating
Amperes
150
V CES
Volts (x 50)
12
1
相关PDF资料
PDF描述
CM150TL-24NF IGBT MOD 6PAC 1200V 150A NF SER
CM150TU-12F IGBT MOD 6PAC 600V 150A F SER
CM150TU-12H IGBT MOD 6PAC 600V 150A U SER
CM15TF-12H IGBT MOD 6PAC 600V 15A H SER
CM15TF-24H IGBT MOD 6PAC 1200V 15A H SER
相关代理商/技术参数
参数描述
CM150TL-12NF_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM150TL-12NF_12 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE
CM150TL-24NF 功能描述:IGBT MOD 6PAC 1200V 150A NF SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM150TL-24NF_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM150TL-24NF_12 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE