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参数资料
| 型号： | CM1623-04DE |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | EMI FILTER + ESD FOR SIM UDFN8 |
| 产品变化通告： | Product Obsolescence 04/Nov/2010 |
| 标准包装： | 3,000 |
| 类型： | 低通 |
| 技术： | RC（Pi） |
| 通道数： | 4 |
| 电阻 - 通道 (Ohms)： | 100 |
| 值： | R = 100 欧姆，C = 20pF |
| ESD 保护： | 是 |
| 滤波器阶数： | 2nd |
| 应用： | SIM 卡 |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 尺寸/尺寸： | 0.067" L x 0.053" W（1.70mm x 1.35mm） |
| 高度： | 0.022"（0.55mm） |
| 包装： | 带卷 (TR) |
| 工作温度： | -40°C ~ 85°C |
CM1623
Table 1. PIN DESCRIPTIONS
PACKAGE / PINOUT DIAGRAMS
8 ? Lead UDFN Package
Top View
Bottom View
Pin
Name
Description
(Pins Down View)
(Pins Up View)
1
RST
Filter + ESD Channel 1
8 7 6 5
1 2 3
4
2
CLK
Filter + ESD Channel 2
3
4
DATA
VCC
Filter + ESD Channel 3
V External
Pin 1
Marking
P23
GND
PAD
GND
PAD
GND
Device Ground
1 2 3 4
8 7 6
5
8
7
6
5
RST
CLK
DATA
VCC
Filter + ESD Channel 1
Filter + ESD Channel 2
Filter + ESD Channel 3
V External
CM1623 ? 04DE
8 ? Lead UDFN Package
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Parameter
Rating
? 65 to +150
100
500
Units
° C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Rating
? 40 to +85
Units
° C
Symbol
R1
R2
R3
C 1
C 2
I LEAK
V SIG
V ESD
Parameter
Reset Channel Resistance
Clock Channel Resistance
Data Channel Resistance
Capacitance on Pins 1, 2, and 3
Capacitance on Pins 4 and 5
Diode Leakage Current (Reverse Bias)
Signal Clamp Voltage
a) Positive Clamp
b) Negative Clamp
ESD Peak Discharge Voltage Protection on All Pins
In ? system ESD Withstand Voltage:
a) Contact Discharge per IEC 61000 ? 4 ? 2 Level 4
b) Air Discharge per IEC 61000 ? 4 ? 2 Level 4
Conditions
At 1 MHz, V IN = 0 V
At 1 MHz, V IN = 0 V
V DIODE = 3.3 V
I LOAD = 10 mA
I LOAD = ? 10 mA
T A = 25 ° C
(Note 2)
Min
80
37.6
80
16
5.6
? 1.5
± 15
± 15
Typ
100
47
100
20
18
0.1
6.8
? 0.8
± 15
± 15
Max
120
56.4
120
24
1.0
9.0
? 0.4
Units
W
W
W
pF
pF
m A
V
kV
1. All parameters specified at T A = 25 ° C unless otherwise noted.
2. Standard IEC 61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330 W .
http://onsemi.com
2
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