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参数资料
| 型号： | CM35MX-24A |
| 厂商： | Powerex Inc |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | CIB MOD 1200V 35A NS SER |
| 标准包装： | 2 |
| 配置： | 三相反相器，带制动器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，35A |
| 电流 - 集电极 (Ic)（最大）： | 35A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 6nF @ 10V |
| 功率 - 最大： | 295W |
| 输入： | 三相桥式整流器 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM35MX-24A
NX-Series CIB Module
(3? Converter + 3? Inverter + Brake)
35 Amperes/1200 Volts
Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Brake Part IGBT/ClampDi
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Internal Gate Resistance
Repetitive Reverse Current
Forward Voltage Drop
External Gate Resistance
I CES
I GES
V GE(th)
V CE(sat)
C ies
C oes
C res
Q G
r g
I RRM
V F
R G
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 2mA, V CE = 0V
T j = 25°C, I C = 20A, V GE = 15V *5
T j = 125°C, I C = 20A, V GE = 15V *5
I C = 20A, V GE = 15V, Chip
V CE = 10V, V GE = 0V
V CC = 600V, I C = 20A, V GE = 15V
T C = 25°C
V R = V RRM
T j = 25°C, I F = 20A *5
T j = 125°C, I F = 20A *5
I F = 20A, Chip
—
—
6
—
—
—
—
—
—
—
—
—
—
—
—
15
—
—
7
2.0
2.2
1.9
—
—
—
150
0
—
2.6
2.16
2.5
—
1.0
0.5
8
2.6
—
—
5.1
0.45
0.1
—
—
1.0
3.4
—
—
150
mA
μA
Volts
Volts
Volts
Volts
nF
nF
nF
nC
?
mA
Volts
Volts
Volts
?
Converter Part
Repetitive Peak Reverse Current
I RRM
V R = V RRM , T j = 150°C
—
—
4
mA
Forward Voltage Drop
V F
I F =
35A *5
—
1.2
1.6
Volts
NTC Thermistor Part
Zero Power Resistance
Deviation of Resistance
R 25
? R/R
T C = 25°C *4
R 100 = 493?, T C = 100°C *4
4.85
-7.3
5.00
—
5.15
+7.8
k?
%
B Constant
B (25/50)
Approximate by
Equation *6
—
3375
—
K
Power Dissipation
P 25
T C = 25°C *4
—
—
10
mW
*4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Chip Location (Top View)
IGBT FWDi
Converter Diode
NTC Thermistor
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
R 50
T 25
*6 B (25/50) = In(
R 25
)/(
1
–
1
T 50
)
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0
RP SP TP
W N
R 25 ;Resistance atAbsoluteTemperatureT 25 [K];T 25 = 25 [°C] + 273.15 = 298.15 [K]
R 50 ; Resistance at Absolute Temperature T 50 [K]; T 50 = 50 [°C] + 273.15 = 323.15 [K]
29.4 28.4
28.6
35.7
41.9
42.6
54
55
56
57
58
59
60
61
TN U P
RN SN U N
U P
W P
V P
Br
V P
U N
V N
V N
Br
Th
W P
W N
30
29
28
27
26
25
24
23
19.1
27.5 28.6
35.7
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Dimensions in mm (Tolerance: ± 1mm)
4
Rev. 11/11
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相关代理商/技术参数 |
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|---|---|
| CM35MXA-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE CIB 35A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 35A, Transistor Polarity:N Channel, DC Collector Current:35A, Collector Emitter Voltage Vces:1.8V, Power Dissipation Pd:355W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES CIB 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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