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| 型号： | CM400DY-24A |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1200V 400A A SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，400A |
| 电流 - 集电极 (Ic)（最大）： | 400A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 70nF @ 10V |
| 功率 - 最大： | 2710W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1018 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400DY-24A
Dual IGBTMOD? A-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, T C = 87°C*)
Peak Collector Current
Emitter Current*** (T C = 25°C)
Peak Emitter Current***
Maximum Collector Dissipation (T C = 25°C*, T j ≤ 150°C)
Mounting Torque, M6 MainTerminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E
I EM
P C
—
—
—
V ISO
CM400DY-24A
–40 to 150
–40 to 125
1200
±20
400
800**
400
800**
2710
40
40
580
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V EC
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 40mA, V CE = 10V
I C = 400A, V GE = 15V, T j = 25°C
I C = 400A, V GE = 15V, T j = 125°C
V CC = 600V, I C = 400A, V GE = 15V
I E = 400A, V GE = 0V
Min.
—
—
6.0
—
—
—
—
Typ.
—
—
7.0
2.1
2.4
2000
—
Max.
1.0
0.5
8.0
3.0
—
—
3.8
Units
mA
μA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V CE = 10V, V GE = 0V
Min.
—
—
—
Typ.
—
—
—
Max.
70
6.0
1.4
Units
nf
nf
nf
Inductive
Turn-on Delay Time
t d(on)
—
—
550
ns
Load
Switch
Time
Rise Time
Turn-off Delay Time
Fall Time
t r
t d(off)
t f
V CC = 600V, I C = 400A,
V GE1 = V GE2 = 15V, R G = 0.78 Ω ,
Inductive Load
—
—
—
—
—
—
180
600
350
ns
ns
ns
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
t rr
Q rr
Switching Operation,
I E = 400A
—
—
—
16
250
—
ns
μC
*T C , T f measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Rev. 10/07
相关PDF资料 |
PDF描述 |
|---|---|
| CM400DY-24NF | IGBT MOD DUAL 1200V 400A NF SER |
| CM400HA-12H | IGBT MOD SGL 600V 400A H SER |
| CM400HA-24A | IGBT MOD SGL 1200V 400A A SERIES |
| CM400HA-24H | IGBT MOD SGL 1200V 400A H SER |
| CM400HA-28H | IGBT MOD SGL 1400V 400A H SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM400DY-24A_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM400DY-24H | 制造商:n/a 功能描述:_ |
| CM400DY-24NF | 功能描述:IGBT MOD DUAL 1200V 400A NF SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM400DY-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM400DY-34A | 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE DUAL 400A 1700V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.7KV, 400A; Transistor Polarity:Dual N Channel; DC Collector Current:400A; Collector Emitter Voltage Vces:1.7kV; Power Dissipation Pd:3.78kW; Operating Temperature Min:-40C; Operating Temperature Max:150C ;RoHS Compliant: Yes 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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