参数资料
型号: CM450DX-24A
厂商: Powerex Inc
文件页数: 2/5页
文件大小: 0K
描述: IGBT MOD DUAL 1200V 450A NX SER
标准包装: 1
系列: IGBTMOD™, NX
配置: 半桥
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.6V @ 15V,450A
电流 - 集电极 (Ic)(最大): 450A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 68nF @ 10V
功率 - 最大: 2840W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
其它名称: 835-1021
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM450DX-24A
Dual IGBTMOD? NX-Series Module
450 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M6 Main Terminal Screws
Module Weight (Typical)
Baseplate Flatness, On Centerline X, Y (See Below)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
T j
T stg
V ISO
CM450DX-24A
-40 to 150
-40 to 125
31
40
330
±0 ~ +100
2500
Units
°C
°C
in-lb
in-lb
Grams
μm
Volts
Inverter Sector
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T C = 90°C) *1
Peak Collector Current *4
Emitter Current (T C = 25°C) *1*5
Peak Emitter Current (Pulse) *4
Maximum Collector Dissipation (T C = 25°C) *1*5
V CES
V GES
I C
I CM
I E *3
I EM *3
P C
1200
±20
450
900
450
900
2840
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
*1
*3
*4
*5
Case temperature (T C ) and heatsink temperature (T f ) are defined on the surface of the baseplate and heatsink at just under the chip.
I E , I EM , V EC , t rr and Q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
Junction temperature (T j ) should not increase beyond T j(max) rating.
BASEPLATE FLATNESS
MEASUREMENT POINT
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
IGBT FWDi NTC Thermistor
Y
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0
X
47
24
– : CONCAVE
26.6
28.2
+ : CONVEX
43.9
51.6
48
Th
23
42.0
HEATSINK SIDE
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Dimensions in mm (Tolerance: ± 1mm)
2
Rev. 5/09
相关PDF资料
PDF描述
CM450HA-5F IGBT MOD SGL 250V 450A F SER
CM500HA-34A IGBT MOD SGL 1700V 500A A SER
CM50BU-24H IGBT MOD H-BRDG 1200V 50A U SER
CM50DU-24F IGBT MOD DUAL 1200V 50A F SER
CM50DU-24H IGBT MOD DUAL 1200V 50A U SER
相关代理商/技术参数
参数描述
CM450DX-24S 功能描述:IGBT MOD DUAL 1200V 450A NX SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM450DX-34SA 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES DUAL
CM450DXL-34SA 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES DUAL
CM450DY-24S 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD DUAL 1200V 410A NX SER 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 450A; Transistor Polarity:Dual N Channel; DC Collector Current:450A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:3.33kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR
CM450HA5F 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 100A I(C)