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| 型号： | CM450HA-5F |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD SGL 250V 450A F SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| IGBT 类型： | 沟道 |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 250V |
| Vge, Ic时的最大Vce（开）： | 1.7V @ 10V，450A |
| 电流 - 集电极 (Ic)（最大）： | 450A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 132nF @ 10V |
| 功率 - 最大： | 735W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM450HA-5F
Trench Gate Design Single IGBTMOD?
450 Amperes/250 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Characteristics
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Maximum Mounting Torque, M6 Terminal Screws
Maximum Mounting Torque, M6 Mounting Screws
Maximum Mounting Torque, M4 (G, E) Terminal Screws
Module Weight (Typical)
V Isolation Voltage
Symbol
T j
T stg
V CES
V GES
I C
I CM
I FM
I FM
P d
—
—
—
—
V RMS
CM450HA-5F
-40 to 150
-40 to 125
250
± 20
450
900*
450
900*
735
26
26
13
270
2500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V FM
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 45mA, V CE = 10V
I C = 450A, V GE = 10V,
I C = 450A, V GE = 10V, T j = 150 ° C
V CC = 50V, I C = 450A, V GS = 15V
I E = 450A, V GS = 0V
Min.
—
—
3.0
—
—
—
—
Typ.
—
—
4.0
1.2
1.1
1760
—
Max.
1.0
0.5
5.0
1.7
—
—
2.0
Units
mA
μ A
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C IES
C OES
C RES
Test Conditions
V GE = 0V, V CE = 10V
Min.
—
—
—
Typ.
—
—
—
Max.
132
6
4.5
Units
nF
nF
nF
Resistive
Turn-on Delay Time
t d(on)
—
—
1200
ns
Load
Switching
Times
Rise Time
Turn-off Delay Time
Fall Time
t r
t d(off)
t F
V CC = 50V, I C = 450A,
V GE1 = V GE2 = 10V, R G = 5.6 ? ,
Resistive Load
—
—
—
—
—
—
2700
900
500
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t rr
Q rr
I E = 450A, di E /dt = -900A/ms
I E = 450A, di E /dt = -900A/ms
—
—
—
7.6
300
—
ns
μ C
Thermal and Mechanical Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R th(j-c)
R th(j-c)
R th(c-f)
Test Conditions
Per IGBT
Per Free Wheel Diode
Per Module, Thermal Grease Applied
Min.
—
—
—
Typ.
—
—
—
Max.
0.17
0.23
0.090
Units
° C/W
° C/W
° C/W
366
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