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| 型号： | CM600HA-28H |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD SGL 1400V 600A H SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 1400V |
| Vge, Ic时的最大Vce（开）： | 4.2V @ 15V，600A |
| 电流 - 集电极 (Ic)（最大）： | 600A |
| 电流 - 集电极截止（最大）： | 2mA |
| Vce 时的输入电容 (Cies)： | 120nF @ 10V |
| 功率 - 最大： | 4100W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-28H
Single IGBTMOD? H-Series Module
600 Amperes/1400 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
Symbol
T j
T stg
V CES
V GES
I C
I CM
I F
I FM
P d
–
–
–
V RMS
CM600HA-28H
–40 to 150
–40 to 125
1400
± 20
600
1200*
600
1200*
4100
95
26
560
2500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V FM
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 60mA, V CE = 10V
I C = 600A, V GE = 15V
I C = 600A, V GE = 15V, T j = 150 ° C
V CC = 800V, I C = 600A, V GE = 15V
I E = 600A, V GE = 0V
Min.
–
–
5.0
–
–
–
–
Typ.
–
–
6.0
3.1
2.95
3060
–
Max.
2.0
0.5
8.0
4.2**
–
–
3.8
Units
mA
μ A
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V GE = 0V, V CE = 10V, f = 1MHz
Min.
–
–
–
Typ.
–
–
–
Max.
120
42
24
Units
nF
nF
nF
Resistive
Turn-on Delay Time
t d(on)
–
–
350
ns
Load
Switching
Times
Rise Time
Turn-off Delay Time
Fall Time
t r
t d(off)
t f
V CC = 800V, I C = 600A,
V GE1 = V GE2 = 15V, R G = 2.1 ?
–
–
–
–
–
–
700
500
500
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t rr
Q rr
I E = 600A, di E /dt = –1200A/ μ s
I E = 600A, di E /dt = –1200A/ μ s
–
–
–
6.0
300
–
ns
μ C
Thermal and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R th(j-c)
R th(j-c)
R th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.03
0.06
0.035
Units
° C/W
° C/W
° C/W
212
相关PDF资料 |
PDF描述 |
|---|---|
| CM600HA-5F | IGBT MOD SGL 250V 600A F SER |
| CM600HB-24A | IGBT MOD SGL 1200V 600A A SER |
| CM600HU-12F | IGBT MOD SGL 600V 600A F SER |
| CM600HU-12H | IGBT MOD SGL 600V 600A H SER |
| CM600HU-24F | IGBT MOD SGL 1200V 600A F SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM600HA-5F | 功能描述:IGBT MOD SGL 250V 600A F SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM600HA-5F_00 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HB-24A | 功能描述:IGBT MOD SGL 1200V 600A A SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM600HB-90H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM600HB-90H_05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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