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参数资料
| 型号： | CM600HB-90H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Single IGBTMOD⑩ HVIGBT 600 Amperes/4500 Volts |
| 中文描述： | 600 A, 4500 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 65K |
| 代理商： | CM600HB-90H |
2
CM600HB-90H
Single IGBTMOD
HVIGBT
600 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM600HB-90H
Units
°
C
°
C
Junction Temperature
T
j
-40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
C
–
115 in-lb
-40 to 125
Collector-Emitter Voltage (V
GE
= 0V)
Gate-Emitter Voltage (V
CE
= 0V)
Collector Current (T
c
= 25
°
C)
Peak Collector Current (Pulse)
4500
Volts
±
20
600
Volts
Amperes
1200*
Amperes
Diode Forward Current** (T
c
= 25
°
C)
Diode Forward Surge Current** (Pulse)
600
Amperes
1200*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C, IGBT Part, T
j
≤
125
°
C)
Max. Mounting Torque M8 Terminal Screws
6700
Watts
Max. Mounting Torque M6 Mounting Screws
–
53
in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws
–
17
in-lb
Module Weight (Typical)
–
1.5
kg
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
V
iso
6000
Volts
* Pulse width and repetition rate should be such that device junction temperature (T
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 60mA, V
CE
= 10V
I
C
= 600A, V
GE
= 15V, T
j
= 25
°
C
I
C
= 600A, V
GE
= 15V, T
j
= 125
°
C
V
CC
= 2250V, I
C
= 600A, V
GE
= 15V
I
E
= 600A, V
GE
= 0V
–
–
12.0
mA
Gate Leakage Current
–
–
0.5
μ
A
Gate-Emitter Threshold Voltage
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
–
3.0
3.9*
Volts
–
3.3
–
Volts
Total Gate Charge
Q
G
V
EC
–
5.4
–
μ
C
Volts
Emitter-Collector Voltage**
–
4.0
5.2
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM600HB-90H_05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HG-130H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM600HG-90H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HN-5F | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM600HN-5F_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
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