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| 型号： | CM600HU-12H |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD SGL 600V 600A H SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，600A |
| 电流 - 集电极 (Ic)（最大）： | 600A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 52.8nF @ 10V |
| 功率 - 最大： | 1560W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HU-12H
Single IGBTMOD? U-Series Module
600 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T c = 25 ° C)
Peak Collector Current (T j ≤ 150 ° C)
Emitter Current** (T c = 25 ° C)
Peak Emitter Current**
Maximum Collector Dissipation (T c = 25 ° C)
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E
I EM
P c
–
–
–
–
V iso
CM600HU-12H
-40 to 150
-40 to 125
600
± 20
600
1200*
600
1200*
1560
95
40
15
450
2500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V EC
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 60mA, V CE = 10V
I C = 600A, V GE = 15V, T j = 25 ° C
I C = 600A, V GE = 15V, T j = 125 ° C
V CC = 300V, I C = 600A, V GE = 15V
I E = 600A, V GE = 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6
2.4
2.6
1200
–
Max.
1
0.5
7.5
3.0
–
–
2.6
Units
mA
μ A
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V CE = 10V, V GE = 0V
Min.
–
–
–
Typ.
–
–
–
Max.
52.8
28.8
7.8
Units
nf
nf
nf
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V CC = 300V, I C = 600A,
V GE1 = V GE2 = 15V,
R G = 1.0 , Resistive
Load Switching Operation
–
–
–
–
–
–
–
–
300
600
350
350
ns
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t rr
Q rr
I E = 600A, di E /dt = -1200A/ μ s
I E = 600A, di E /dt = -1200A/ μ s
–
–
–
1.44
160
–
ns
μ C
Thermal and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R th(j-c) Q
R th(j-c) D
R th(c-f)
Test Conditions
Per IGBT Module
Per FWDi Module
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.02
Max.
0.08
0.12
–
Units
° C/ W
° C/W
° C/W
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM600HU-12H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HU-24F | 功能描述:IGBT MOD SGL 1200V 600A F SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM600HU-24F_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM600HU-24H | 功能描述:IGBT MOD SGL 1200V 600A H SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM600HU-24H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
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