参数资料
型号: CM75DU-24F
厂商: Powerex Inc
文件页数: 4/4页
文件大小: 0K
描述: IGBT MOD DUAL 1200V 75A F SER
标准包装: 3
系列: IGBTMOD™
IGBT 类型: 沟道
配置: 半桥
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.4V @ 15V,75A
电流 - 集电极 (Ic)(最大): 75A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 29nF @ 10V
功率 - 最大: 450W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
CM75DU-24F
TRENCH GATE DESIGN DUAL IGBTMOD?
75 AMPERES/1200 VOLTS
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
150
125
100
75
50
T J = 25 O C
11
15
V GE = 20V
10 9.5
9
8.5
3
2
1
V GE = 15V
T J = 25 ° C
T J = 125 ° C
5
4
3
2
T J = 25 ° C
I C = 150A
I C = 75A
I C = 30A
25
8
1
0
0
1
2
3
4
0
0
30
60
90
120
150
0
0
6
8
10 12 14
16
18 20
CAPACITANCE VS. V CE
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-CURRENT, I C , (AMPERES)
(TYPICAL)
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10 3
10 2
T J = 25 ° C
10 2
10 1
C IES
10 3
10 2
V CC = 600V
V GE = ± 15V
R G = 4.2 ?
T J = 125 ° C
INDUCTIVE LOAD
T F
T D(OFF)
T D(ON)
T R
10 1
10 0
V GE = 0V
C OES
C RES
10 1
10 0
0
1.0
2.0
3.0
4.0
10 -1
10 -1
10 0
10 1
10 2
10 0
10 1
10 2
10 3
EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
COLLECTOR CURRENT, I C , (AMPERES)
10 2
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
I RR
T RR
10 2
20
16
12
I C = 75A
GATE CHARGE, V GE
V CC = 400V
V CC = 600V
10 1
10 0
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
10 -3 10 -2 10 -1 10 0
PER UNIT BASE
R TH(J-C) = 0.28 ° C/W (IGBT)
R TH(J-C) = 0.47 ° C/W (FWDI)
SINGLE PULSE
T C = 25 ° C
10 1
10 1
10 1
10 -1
10 -1
V CC = 600V
V GE = ± 15V
R G = 4.2 ?
T J = 25 ° C
INDUCTIVE LOAD
10 0
10 0
10 1
10 0
10 2
8
4
0
0
200
400
600
800 1000 1200
10 -2
10 -3
10 -5
10 -4
10 -2
10 -3
10 -3
4
EMITTER CURRENT, I E , (AMPERES)
GATE CHARGE, Q G , (NC)
TIME, (S)
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