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参数资料
| 型号： | CM75E3U-24H |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD CHOP 1200V 75A U SER |
| 标准包装： | 3 |
| 系列： | IGBTMOD™ |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3.7V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 11nF @ 10V |
| 功率 - 最大： | 600W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75E3U-24H
Chopper IGBTMOD? U-Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T c = 25 ° C)
Peak Collector Current
Emitter Current** (T c = 25 ° C)
Peak Emitter Current**
Maximum Collector Dissipation (T c = 25 ° C, T j ≤ 150 ° C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E
I EM
P c
–
–
–
V iso
CM75E3U-24H
-40 to 150
-40 to 125
1200
± 20
75
150*
75
150*
600
31
40
310
2500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Emitter-Collector Voltage
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V EC
V FM
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 7.5mA, V CE = 10V
I C = 75A, V GE = 15V, T j = 25 ° C
I C = 75A, V GE = 15V, T j = 125 ° C
V CC = 600V, I C = 75A, V GE = 15V
I E = 75A, V GE = 0V
I F = 75A, Clamp Diode Part
Min.
–
–
4.5
–
–
–
–
–
Typ.
–
–
6
2.9
2.85
280
–
–
Max.
1
0.5
7.5
3.7
–
–
3.2
3.2
Units
mA
μ A
Volts
Volts
Volts
nC
Volts
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V CE = 10V, V GE = 0V
Min.
–
–
–
Typ.
–
–
–
Max.
11
3.7
2.2
Units
nf
nf
nf
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V CC = 600V, I C = 75A,
V GE1 = V GE2 = 15V,
R G = 4.2 , Resistive
Load Switching Operation
–
–
–
–
–
–
–
–
100
200
250
350
ns
ns
ns
ns
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t rr
Q rr
t rr
Q rr
I E = 75A, di E /dt = -150A/ μ s
I E = 75A, di E /dt = -150A/ μ s
I F = 75A, Clamp Diode Part
di F /dt = -150A/ μ s
–
–
–
–
–
0.41
–
0.41
300
–
300
–
ns
μ C
ns
μ C
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
132
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相关代理商/技术参数 |
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| CM75E3U-24H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75E3Y12E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 75A I(C) |
| CM75E3Y24E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) |
| CM75MX-12A | 功能描述:CIB MOD 600V 75A NX SER RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75MX-12A_12 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
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