参数资料
型号: CM75MX-12A
厂商: Powerex Inc
文件页数: 2/7页
文件大小: 0K
描述: CIB MOD 600V 75A NX SER
标准包装: 1
配置: 三相反相器,带制动器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.1V @ 15V,75A
电流 - 集电极 (Ic)(最大): 75A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 7.5nF @ 10V
功率 - 最大: 280W
输入: 三相桥式整流器
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MX-12A
NX-Series CIB Module
(3? Converter + 3? Inverter + Brake)
75 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Characteristics
Symbol
CM75MX-12A
Units
Inverter Part IGBT/FWDi
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, T C = 70°C) *2,*4
Collector Current (Pulse) *3
Total Power Dissipation (T C = 25°C) *2,*4
V CES
V GES
I C
I CRM
P tot
600
±20
75
150
280
Volts
Volts
Amperes
Amperes
Watts
I E
Emitter
Current *2
*1
75
Amperes
Emitter Current (Pulse) *3
I ERM *1
150
Amperes
Brake Part IGBT/ClampDi
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
V CES
V GES
600
±20
Volts
Volts
Collector Current (DC, T C =
97°C) *2,*4
I C
50
Amperes
Collector Current (Pulse) *3
Total Power Dissipation (T C = 25°C) *2,*4
Repetitive Peak Reverse Voltage
I CRM
P tot
V RRM
100
280
600
Amperes
Watts
Volts
Forward Current (T C =
25°C) *2
I F
50
Amperes
Forward Current (Pulse) *3
I FRM
100
Amperes
Converter Part ConvDi
Repetitive Peak Reverse Voltage
Recommended AC Input Voltage
DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,T C = 125°C) *2,*4
Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive)
Current Square Time (Value for One Cycle of Surge Current)
V RRM
E a
I O
I FSM
I 2 t
800
220
75
750
2340
Volts
Volts
Amperes
Amperes
A 2 s
Module
Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.)
Junction Temperature
Storage Temperature
*1
Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
V ISO
T j
T stg
Chip Location (Top View)
2500
-40 ~ +150
-40 ~ +125
Volts
°C
°C
*2
*3
*4
Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating.
Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate
and the heatsink side just under the chips. Refer to the figure to the right for chip location.
IGBT
FWDi
Converter Diode
NTC Thermistor
The heatsink thermal resistance should be measured just under the chips.
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0
29.5 27.6
42.0 42.9
V P
26.5 25.5
34.7
41.2
54
55
56
57
58
59
60
61
RN
RP
SN
SP
TN
TP
U P V P
U N Br
U P
U N
W P
V N
V N
Br
Th
W N
W P
W N
30
29
28
27
26
25
24
23
17.8
27.1
33.6 35.2
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Dimensions in mm (Tolerance: ± 1mm)
2
Rev. 11/11
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