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| 型号： | CM75MX-24A |
| 厂商： | Powerex Inc |
| 文件页数： | 5/7页 |
| 文件大小： | 0K |
| 描述： | CIB MOD 1200V 75A NX SER |
| 标准包装： | 1 |
| 配置： | 三相反相器，带制动器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 11.5nF @ 10V |
| 功率 - 最大： | 500W |
| 输入： | 三相桥式整流器 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MX-24A
NX-Series CIB Module
(3? Converter + 3? Inverter + Brake)
75 Amperes/1200 Volts
Thermal Resistance Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Symbol
R th(j-c) Q
R th(j-c) D
R th(j-c) Q
Test Conditions
Per Inverter IGBT *4
Per Inverter FWDi *4
Brake IGBT *4
Min.
—
—
—
Typ.
—
—
—
Max.
0.25
0.40
0.35
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
R th(j-c) D
Brake
ClampDi *4
—
—
0.63
°C/W
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R th(j-c) D
R th(c-s)
Per ConvDi *4
Case to Heatsink, Per 1 Module
—
—
—
0.015
0.24
—
°C/W
°C/W
Thermal Grease Applied *4,*7
Mechanical Characteristics
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Mounting Torque, M5 Mounting Screws
Module Weight (Typical)
Isolation Voltage, (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.)
—
—
V ISO
31
270
2500
in-lb
Grams
Volts
Flatness of
Baseplate *8
e c
± 0 to +100
μm
*4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
Chip Location (Top View)
IGBT FWDi
Converter Diode
NTC Thermistor
The heatsink thermal resistance should be measured just under the chips.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m ? K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0
29.5
RN
V N
X
Y
MOUNTING
SIDE
26.5 25.5
26.7
35.2
42.9
44.9 43.4
54
55
56
57
58
59
60
61
SN TN U P
U N
RP SP TP U P V P
U N
V P
Br
Br
W P
N
V Th W N
W P
W N
30
29
28
27
26
25
24
23
18.7
25.1 25.6
33.3
35.8
MOUNTING SIDE
– : CONCAVE
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
MOUNTING SIDE
+ : CONVEX
Dimensions in mm (Tolerance: ±1mm)
Rev. 11/11
5
相关PDF资料 |
PDF描述 |
|---|---|
| CM75RL-12NF | IGBT MOD 7PAC 600V 75A NF SER |
| CM75RL-24NF | IGBT MOD 7PAC 1200V 75A NF SER |
| CM75RX-24A | IGBT MOD 7PAC 1200V 75A NX SER |
| CM75RX-24S | IGBT MOD 7PAC 1200V 75A NX SER |
| CM75TF-12H | IGBT MOD 6PAC 600V 75A H SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM75MX-24A_12 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM75MXA-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE CIB 75A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES CIB 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 75A, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Voltage Vces:1.8V, Power Dissipation Pd:600W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-40C |
| CM75MXA-24S_13 | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:NX-Series CIB Module 75 Amperes/1200 Volts |
| CM75RL-12NF | 功能描述:IGBT MOD 7PAC 600V 75A NF SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75RL-12NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
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