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参数资料
| 型号： | CM800HA-28H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Single IGBTMOD 800 Amperes/1400 Volts |
| 中文描述： | 800 A, 1400 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 55K |
| 代理商： | CM800HA-28H |
2
CM800HA-28H
Single IGBTMOD H-Series Module
800 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM800HA-28H
Units
°
C
°
C
Junction Temperature
T
j
–40 to +150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
d
–
–40 to +125
Collector-Emitter Voltage (G-E SHORT)
1400
Volts
Gate-Emitter Voltage
±
20
800
Volts
Collector Current
Amperes
Peak Collector Current
1600*
Amperes
Diode Forward Current
800
Amperes
Diode Forward Surge Current
1600*
Amperes
Power Dissipation
4800
Watts
Max. Mounting Torque M8 Terminal Screws
95
in-lb
Max. Mounting Torque M6 Mounting Screws
–
26
in-lb
Max. Mounting Torque M4 G-E Terminal Screws
–
13
in-lb
Module Weight (Typical)
–
1600
Grams
V Isolation
V
RMS
2500
Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 80mA, V
CE
= 10V
I
C
= 800A, V
GE
= 15V
I
C
= 800A, V
GE
= 15V, T
j
= 150
°
C
V
CC
= 600V, I
C
= 800A, V
GS
= 15V
I
E
= 800A, V
GS
= 0V
–
–
5.0
mA
Gate Leakage Current
–
–
0.5
μ
A
Volts
Gate-Emitter Threshold Voltage
4.5
6.0
7.5
Collector-Emitter Saturation Voltage
–
2.7
3.6
Volts
–
2.4
–
Volts
Total Gate Charge
Q
G
V
FM
–
4590
–
nC
Diode Forward Voltage
–
–
3.5
Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
172
nF
Output Capacitance
V
GE
= 0V, V
CE
= 10V, f = 1MHz
–
–
60
nF
Reverse Transfer Capacitance
–
–
35
nF
Resistive
Turn-on Delay Time
–
–
500
ns
Load
Rise Time
V
CC
= 600V, I
C
= 800A,
V
GE1
= V
GE2
= 15V, R
G
= 3.3
–
–
1200
ns
Switching
Turn-off Delay Time
–
–
1000
ns
Times
Fall Time
–
–
350
ns
Diode Reverse Recovery Time
I
E
= 800A, di
E
/dt = –1600A/
μ
s
I
E
= 800A, di
E
/dt = –1600A/
μ
s
–
–
250
ns
Diode Reverse Recovery Charge
–
6.3
–
μ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.026
Thermal Resistance, Junction to Case
Per FWDi
–
–
0.058
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
–
0.018
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相关代理商/技术参数 |
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|---|---|
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