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参数资料
| 型号： | CM800HB-66H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 800 A, 3300 V, N-CHANNEL IGBT |
| 封装： | POWER MODULE-7 |
| 文件页数： | 3/4页 |
| 文件大小： | 46K |
| 代理商： | CM800HB-66H |
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM800HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
TRANSFER CHARACTERISTICS
(TYPICAL)
C
C
GATE-EMITTER VOLTAGE V
GE
(V)
C
S
C
COLLECTOR CURRENT I
C
(A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
E
E
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
800
400
0
10
0
2
4
6
1200
8
1600
0
8
6
4
2
0
400
800
1200
1600
V
GE
=15V
T
j
= 25
°
C
T
j
= 125
°
C
1600
800
400
0
1200
0
5
4
3
2
1
10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
T
j
=25
°
C
20
0
4
8
12
16
V
CE
=10V
T
j
= 25
°
C
T
j
= 125
°
C
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
0
20
16
12
8
4
10
8
6
4
2
0
C
S
C
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
= 25
°
C
I
C
= 1600A
I
C
= 800A
I
C
= 320A
T
j
=25
°
C
V
GE
=13V
V
GE
=12V
V
GE
=11V V
GE
=10V
V
GE
=9V
V
GE
=8V
V
GE
=7V
V
GE
=14V
V
GE
=15V
V
GE
=20V
10
1
2 3
10
–1
5 710
0
2 3 5 710
1
2 3 5 710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
CAPACITANCE VS. V
CE
(TYPICAL)
C
i
,
o
,
r
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25
°
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM800HC-66H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM800HC-90R | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM801 | 制造商:Bogen Communications 功能描述: |
| CM8022 | 制造商:CML 制造商全称:Chicago Miniature Lamp,inc 功能描述:T-1 Sub-Midget Flange Base |
| CM80615003174AJ | 制造商:Intel 功能描述:INTEL? CORE- I5-550 PROCESSOR (3.20 GHZ; 4M CACHE; LGA1156 - Trays |
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