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参数资料
| 型号： | CMBT8050D |
| 厂商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶体管 |
| 文件页数： | 2/3页 |
| 文件大小： | 175K |
| 代理商： | CMBT8050D |
CMBT8050
SOT-23
Formed SMD Package
Tape Specification for SOT-23 Surface Mount Device
SOT-23 Package Reel Information
Reel Specifications for W Packing (13") and 7"
SOT-23 Formed SMD Package
±0.05
±0.1
±0.10
±0.05
±0.1
±0.05
1.6
MAX
1.22
2.77
8.0
3.5
4.0
±0.1
4.0
1.55
2.0
1.75
+0.3
5.75
MAX
3.15
1.0
- 0.1
Direction of Unreeling
All dimensions in mm
329.2±0.5 / 178 ±0.5
14.4
7.9 – 10.9
TR
AI
LE
R
FI
XI
N
G
TA
PE
LE
AD
ER
9.2±0.5
MAX
100.0±0.5 / 54.5 ±0.5
2.0±0.5
20.2 MIN
DETAIL X
13.0
+0.5
–0.2
180
or
330
All dimensions in mm
330 / 180 mm – Antistatic Coated Plastic Reel
NOTES:
No. of Devices
8mm Tape
Size of Reel
330 mm (13")
10,000 Pcs
8mm Tape
Size of Reel
180 mm (7")
3,000 Pcs
1.
The bandolier of 330 mm reel contains at least 10,000 devices.
2.
The bandolier of 180 mm reel contains at least 3,000 devices.
3.
No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.
15 empty compartments for 180 mm reel.
4.
Three consecutive empty places might be found provided this gap is followed by 6
consecutive devices.
5.
The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330 mm).
In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At the end
of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.
± 0.02
1.30
0.60
7°
0.08
PARTINGLINE
RO.08
0.21
6°
7°
5°
±3"
±0.05
2.50
±4"
±
0
.0
1
0
.1
2
0.08
R0.08
±
0
.0
2
±
0
.0
2
5
0
.9
5
0
.0
6
±
0
.0
4
0
.6
0
± 0.02
2.50
0.60
+
0
.0
8
-0
.0
2
1.30
±0.05
±0.025
±0.02
0
.4
0
3°
0.60
±
0
.0
2
5
2
.9
0
1
.9
0
±
0
.0
5
cL
1
2
3
SOT-23 T&R
3K/reel
10K/reel
136 gm/3K pcs
415 gm/10K pcs
3" x 7.5" x 7.5"
9" x 9" x 9"
13" x 13" x 0.5"
12 K
51 K
10 K
17" x 15" x 13.5"
19" x 19" x 19"
17" x 15" x 13.5"
192 K
408 K
300 K
12 kgs
28 kgs
16 kgs
PACKAGE
Net Weight/Qty
Details
STANDARDPACK
INNER CARTON BOX
Qty
OUTER CARTON BOX
Qty
Gr Wt
Size
Packing Detail
Continental Device India Limited
Data Sheet
Page 2 of 3
相关PDF资料 |
PDF描述 |
|---|---|
| CMBT8050E | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8550 | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8550C | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8550D | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8550E | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CMBT8050E | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8098 | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| CMBT8099 | 功能描述:两极晶体管 - BJT Si Planar Trans 80V, 10uA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CMBT8099-T | 功能描述:两极晶体管 - BJT NPN Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CMBT8099T/-W | 功能描述:两极晶体管 - BJT NPN Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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