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参数资料
| 型号： | CMRDM3590 |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 160 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 1/2页 |
| 文件大小： | 603K |
| 代理商： | CMRDM3590 |
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
8.0
V
Continuous Drain Current (Steady State)
ID
160
mA
Continuous Drain Current (tp < 5s)
ID
200
mA
Power Dissipation
PD
125
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
1000
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF
VGS=5.0V, VDS=0V
100
nA
IGSSR
VGS=5.0V, VDS=0V
100
nA
IDSS
VDS=5.0V, VGS=0V
50
nA
IDSS
VDS=16V, VGS=0V
100
nA
BVDSS
VGS=0V, ID=250μA
20
V
VGS(th)
VDS=VGS, ID=250μA
0.4
1.0
V
rDS(ON)
VGS=4.5V, ID=100mA
1.5
3.0
Ω
rDS(ON)
VGS=2.5V, ID=50mA
2.0
4.0
Ω
rDS(ON)
VGS=1.8V, ID=20mA
3.0
6.0
Ω
rDS(ON)
VGS=1.5V, ID=10mA
4.0
10
Ω
rDS(ON)
VGS=1.2V, ID=1mA
7.0
Ω
gFS
VDS=5.0V, ID=125mA
1.3
S
Crss
VDS=15V, VGS=0V, f=1.0MHz
2.2
pF
Ciss
VDS=15V, VGS=0V, f=1.0MHz
9.0
pF
Coss
VDS=15V, VGS=0V, f=1.0MHz
3.0
pF
ton
VDD=10V, VGS=4.5V, ID=200mA
40
ns
toff
VDD=10V, VGS=4.5V, ID=200mA
150
ns
CMRDM3590
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-963 CASE
Central
Semiconductor Corp.
TM
R2 (25-February 2009)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMRDM3590 is
an Enhancement-mode Dual N-Channel Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(ON)
and Low Threshold Voltage.
APPLICATIONS:
Load/Power Switches
Power Supply Converter Circuits
Battery Powered Portable Devices
FEATURES:
Power Dissipation: 125mW
Low Package Profile: 0.5mm (MAX)
Low rDS(ON)
Low Threshold Voltage
Logic Level Compatible
Small SOT-963 Surface Mount Package
MARKING CODE: CR
Device is Halogen Free by design
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