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参数资料
| 型号： | CNA1007H |
| 厂商： | PANASONIC CORP |
| 元件分类： | 开关 |
| 英文描述： | Photo Interrupter |
| 中文描述： | 5 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封装： | PISTR104-024, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 58K |
| 代理商： | CNA1007H |
1
Transmissive Photosensors (Photo Interrupters)
CNA1007H
Photo Interrupter
(Input pulse)
(Output pulse)
50
R
L
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
r
t
f
For contactless SW, object detection
*1
Input power derating ratio is 1.0 mW/C at Ta = 25C.
*2
Output power derating ratio is 1.33 mW/C at Ta = 25C.
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +85
T
stg
– 40 to +100
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
5
50
75
20
30
5
100
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Symbol
V
F
I
R
I
CEO
I
C
Conditions
min
typ
1.25
max
1.4
10
200
14
0.4
Unit
V
μ
A
nA
mA
V
μ
s
Input
I
F
= 20mA
V
R
= 3V
V
CE
= 10V
V
CE
= 5V, I
F
= 20mA
Output characteristics
Collector cutoff current
Collector current
Transfer
characteristics
0.5
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 40mA, I
C
= 1mA
Response time
t
r
, t
f*
V
CC
= 5V, I
C
= 1mA, R
L
= 100
5
*
Switching time measurement circuit
Unit : mm
SEC. A-A'
(C1)
(2.54)
0
±
0
(4-0.45)
1
5.0
6.0
1.5
±
0.15
2
3
1
4
A
A'
14.0
5.0
±
0.15
(10.0)
1.8
φ
1.2
(4-0.45)
(
2
1
3
±
0
Device
Center
1
–0.1
+0
Pin connection
2
3
1
4
Internal connector
Overview
CNA1007H is a transmissive photosensor in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Features
Position detection accuracy : 0.3 mm
Gap width : 5 mm
Horizontal slit type
The type directly attached to PCB ( with a positioning pins)
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| CNA1011K | 功能描述:PHOTO INTERRUPTER 5MM SLOT PCB RoHS:是 类别:传感器，转换器 >> 光学 - 光断续器 - 槽型 - 晶体管输出 系列:- 产品变化通告:Internal Chip Change 04/May/2007 标准包装:100 系列:- 检测距离:0.063"（1.6mm） 检测方法:可传导的 输出配置:光电晶体管 电流 - DC 正向(If):50mA 电流 - 集电极 (Ic)（最大）:20mA 电压 - 集电极发射极击穿（最大）:35V 响应时间:35µs，35µs 安装类型:通孔 封装/外壳:PCB 安装 包装:管件 类型:无放大 工作温度:-25°C ~ 85°C 其它名称:425-1978-5 |
| CNA1011K(ON1113) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Opto-Electronic Device - Photocouplers·Photosensors - Transmissive Photosensors |
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