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参数资料
| 型号： | CNY117F-3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | OPTOCOUPL DC-IN 1CH TRANS DC-OUT 6PDIP - Bulk |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR 100-200% |
| 文件页数： | 2/9页 |
| 文件大小： | 191K |
| 代理商： | CNY117F-3 |
CNY117F
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 25-Oct-12
2
Document Number: 83598
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6.0
V
DC forward current
IF
60
mA
Surge forward current
t
≤ 10 μs
IFSM
2.5
A
Power dissipation
Pdiss
70
mW
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp
≤ 10 ms
ICM
100
mA
Output power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
between emitter and detector
VISO
5000
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
≥ 175
Isolation resistance
VIO = 500 V
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 110
°C
Soldering temperature (1)
2 mm from case,
≤ 10 s
Tsld
260
°C
Total power dissipation
Pdiss
220
mW
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.39
1.65
V
Breakdown voltage
IR = 10 μA
VBR
6.0
V
Reverse current
VR = 6.0 V
IR
0.01
10
μA
Capacitance
VR = 0 V, f = 1.0 MHz
CO
25
pF
OUTPUT
Collector emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
5.2
pF
Base collector capacitance
VCE = 5.0 V, f = 1.0 MHz
CBC
6.5
pF
Emitter base capacitance
VCE = 5.0 V, f = 1.0 MHz
CEB
7.5
pF
COUPLER
Collector emitter, saturation voltage
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Coupling capacitance
CC
0.6
pF
Collector emitter, leakage current
VCE = 10 V
CNY117F-1
ICEO
2.0
50
nA
CNY117F-2
ICEO
2.0
50
nA
CNY117F-3
ICEO
5.0
100
nA
CNY117F-4
ICEO
5.0
100
nA
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相关代理商/技术参数 |
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| CNY117F-3X001 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR 100-200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY117F-3X006 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR 100-200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY117F-3X007T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR 100-200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY117F-3X016 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR 100-200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY117F-3X017T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR 100-200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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