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参数资料
| 型号： | CNY17-3X017 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP SMD Tube |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR 100-200% |
| 文件页数： | 2/8页 |
| 文件大小： | 185K |
| 代理商： | CNY17-3X017 |
CNY17
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 25-Oct-12
2
Document Number: 83606
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Forward surge current
tp
≤ 10 μs
IFSM
2.5
A
LED power dissipation
at 25 °C
Pdiss
70
mW
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Emitter base breakdown voltage
BVEBO
7V
Collector current
IC
50
mA
tp/T = 0.5, tp
≤ 10 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage between emitter and detector
t = 1 s
VISO
5000
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between emitter and detector
≥ 0.4
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 110
°C
Soldering temperature (1)
2 mm from case,
≤ 10 s
Tsld
260
°C
Total power dissipation
Pdiss
220
mW
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.39
1.65
V
Breakdown voltage
IR = 10 μA
VBR
6V
Reverse current
VR = 6 V
IR
0.01
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance
Rth
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
5.2
pF
Collector base capacitance
VCE = 5 V, f = 1 MHz
CCB
6.5
pF
Emitter base capacitance
VCE = 5 V, f = 1 MHz
CEB
7.5
pF
Thermal resistance
Rth
500
K/W
COUPLER
Collector emitter, saturation voltage
VF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Coupling capacitance
CC
0.6
pF
Collector emitter, leakage current
VCE = 10 V
CNY17-1
ICEO
250
nA
CNY17-2
ICEO
250
nA
CNY17-3
ICEO
5
100
nA
CNY17-4
ICEO
5
100
nA
相关PDF资料 |
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|---|---|
| CNY17-1X016 | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| CNY17-3X009 | CNY17 Optocoupler, Phototransistor Output, with Base Connection |
| CNY17-2X007T | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP SMD T/R |
| CNY17-1X017 | CNY17 Optocoupler, Phototransistor Output, with Base Connection |
| CNY17-3X009T | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP SMD T/R |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CNY17-3X017T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR 100-200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY17-3XSM | 制造商:Isocom Components 功能描述:OPTOCOUPLER SMDIP-6 TR O/P |
| CNY17-3Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
| CNY174 | 功能描述:晶体管输出光电耦合器 DIP-6 PHOTO TRANS RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY17-4 | 功能描述:晶体管输出光电耦合器 NPN Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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