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参数资料
| 型号： | CNY172VM |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER TRANS-OUT VDE 6MDIP |
| 标准包装： | 1,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 7500Vpk |
| 电流传输比（最小值）： | 63% @ 10mA |
| 电流传输比（最大）： | 125% @ 10mA |
| 输出电压： | 70V |
| 电流 - 输出 / 通道： | 50mA |
| 电流 - DC 正向(If)： | 60mA |
| Vce饱和（最大）： | 400mV |
| 输出类型： | 有基极的晶体管 |
| 安装类型： | 通孔 |
| 封装/外壳： | 6-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
Electrical Characteristics (T A = 25°C Unless otherwise speci?ed.) (1)
Individual Component Characteristics
Symbol Parameters Test Conditions
Device
Min.
Typ.
Max.
Units
EMITTER
V F
Input Forward Voltage
I F = 60mA
CNY17XM,
1.0
1.35
1.65
V
CNY17FXM
I F = 10mA
MOC810XM
1.0
1.15
1.50
C J
Capacitance
V F = 0 V, f = 1.0MHz
All
18
pF
I R
Reverse Leakage
V R = 6V
All
0.001
10
μA
Current
DETECTOR
Breakdown Voltage
BV CEO
BV CBO
BV ECO
Collector to Emitter
Collector to Base
Emitter to Collector
I C = 1.0mA, I F = 0
I C = 10μA, I F = 0
I E = 100μA, I F = 0
All
CNY171M/2M/3M/4M
All
70
70
7
100
120
10
V
Leakage Current
I CEO
I CBO
Collector to Emitter
Collector to Base
V CE = 10 V, I F = 0
V CB = 10 V, I F = 0
All
CNY171M/2M/3M/4M
1
50
20
nA
nA
Capacitance
C CE
C CB
C EB
Collector to Emitter
Collector to Base
Emitter to Base
V CE = 0, f = 1MHz
V CB = 0, f = 1MHz
V EB = 0, f = 1MHz
All
CNY171M/2M/3M/4M
CNY171M/2M/3M/4M
8
20
10
pF
pF
pF
Isolation Characteristics
Symbol
V ISO
R ISO
C ISO
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60 Hz, t = 1 sec.,
I I-O ≤ 2μA (4)
V I-O = 500 VDC (4)
1MHz (4)
V I-O = ?, f =
Min.
7500
10 11
Typ.*
0.2
Max.
Units
Vac(pk)
?
pF
Transfer Characteristics (T A = 25°C Unless otherwise speci?ed.) (3)
Symbol
DC Characteristics
Test Conditions
Min. Typ.* Max. Units
COUPLED
(CTR) (2) Output Collector
Current
MOC8106M
MOC8107M
CNY17F1M
I F = 10mA, V CE = 10V
I F = 10mA, V CE = 5V
50
100
40
150
300
80
%
CNY17F2M
CNY17F3M
CNY17F4M
CNY171M
CNY172M
CNY173M
CNY174M
63
100
160
40
63
100
160
125
200
320
80
125
200
320
V CE(sat)
Collector-Emitter
CNY17XM/FXM
I C = 2.5mA, I F = 10mA
0.4
V
Saturation Voltage MOC8106M/7M
*All typicals at T A = 25°C
?2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
I C = 500μA, I F = 5.0mA
3
www.fairchildsemi.com
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相关代理商/技术参数 |
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| CNY17-2VM | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Phototransistor Optocouplers |
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| CNY172W | 功能描述:晶体管输出光电耦合器 PHOTO TRANS SMD RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY17-2W | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Phototransistor Optocouplers |
| CNY17-2-W00E | 功能描述:晶体管输出光电耦合器 5000 Vrms 0.3mA RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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