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参数资料
| 型号： | CNY65EXI |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR 50-300% |
| 文件页数： | 2/9页 |
| 文件大小： | 118K |
| 代理商： | CNY65EXI |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83540
2
Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5V
Forward current
IF
75
mA
Forward surge current
tp 10 μs
IFSM
1.5
A
Power dissipation
Pdiss
120
mW
Junction temperature
Tj
100
°C
OUTPUT
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp 10 ms
ICM
100
mA
Power dissipation
Pdiss
130
mW
Junction temperature
Tj
100
°C
COUPLER
AC isolation test voltage CNY64
t = 1 min
VISO
8200
VRMS
DC isolation test voltage CNY65
t = 1 s
VISO
13.9
kV
DC isolation test voltage CNY66
t = 1 s
VISO
13.9
kV
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
- 55 to + 85
°C
Storage temperature range
Tstg
- 55 to + 100
°C
Soldering temperature
2 mm from case,
10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0, f = 1 MHz
Cj
50
pF
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 μA
VECO
7V
Collector emitter leakage current
VCE = 20 V, IF = 0 A
ICEO
200
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF
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| CNY65EXI | 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| CNY65ST | 功能描述:晶体管输出光电耦合器 PHOTOTRANSISTOR OUT CTR 50-300% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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| CNY70 | 功能描述:光学开关（反射型，光电晶体管输出） Reflective Optical Sensor w/Trans Out RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
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