- 您现在的位置：买卖IC网 > PDF目录26505 > CNY70 (VISHAY SEMICONDUCTORS) Position, Linear, Photoelectric Sensor, POSITION, LINEAR SENSOR-DIFFUSE, 0-5mm, 0.30-1mA, SQUARE, THROUGH HOLE MOUNT, 7 X 7 MM, 6 MM HEIGHT, ROHS COMPLIANT, PIN 4 PDF资料下载
参数资料
| 型号： | CNY70 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 线性位移传感器 |
| 英文描述： | Position, Linear, Photoelectric Sensor, POSITION, LINEAR SENSOR-DIFFUSE, 0-5mm, 0.30-1mA, SQUARE, THROUGH HOLE MOUNT, 7 X 7 MM, 6 MM HEIGHT, ROHS COMPLIANT, PIN 4 |
| 中文描述： | Photomicrosensors Reflective Optical Sensor w/Trans Out |
| 文件页数： | 4/11页 |
| 文件大小： | 239K |
| 代理商： | CNY70 |
CNY70
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 30-Jul-12
2
Document Number: 83751
For technical questions, contact: sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
Fig. 1 - Power Dissipation vs. Ambient Temperature
Notes
(1) Measured with the “Kodak neutral test card”, white side with 90 % diffuse reflectance
(2) Measured without reflecting medium
OUTPUT (DETECTOR)
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Power dissipation
Tamb
≤ 25 °C
PV
100
mW
Junction temperature
Tj
100
°C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
0
100
200
300
0
95 11071
P
-
Power
Dissipation
(mW)
Tamb - Ambient Temperature (°C)
IR - diode
Coupled device
Phototransistor
25
50
75
100
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
COUPLER
Collector current
VCE = 5 V, IF = 20 mA,
d = 0.3 mm (figure 1)
IC (2)
0.3
1.0
mA
Cross talk current
VCE = 5 V, IF = 20 mA, (figure 2)
ICX (3)
600
nA
Collector emitter saturation
voltage
IF = 20 mA, IC = 0.1 mA,
d = 0.3 mm (figure 1)
VCEsat (2)
0.3
V
INPUT (EMITTER)
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Radiant intensity
IF = 50 mA, tp = 20 ms
Ie
7.5
mW/sr
Peak wavelength
IF = 100 mA
λP
940
nm
Virtual source diameter
Method: 63 % encircled energy
d
1.2
mm
OUTPUT (DETECTOR)
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 μA
VECO
5V
Collector dark current
VCE = 20 V, IF = 0 A, E = 0 lx
ICEO
200
nA
相关PDF资料 |
PDF描述 |
|---|---|
| COM20019ILJP | |
| CP0603A2442CSTR | |
| CP0805A0881ESTR | |
| CP0805A1441BSTR | |
| CP2101-GMR | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CNY70_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Reflective Optical Sensor with Transistor Output |
| CNY70_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Reflective Optical Sensor with Transistor Output |
| CNY71 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN-OUTPUT AC-INPUT OPTOCOUPLER |
| CNY74 | 制造商:TEMIC 制造商全称:TEMIC Semiconductors 功能描述:Multichannel Optocoupler with Phototransistor Output |
| CNY74-2 | 制造商:Vishay Semiconductors 功能描述: |
发布紧急采购，3分钟左右您将得到回复。