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参数资料
| 型号： | COM250A |
| 英文描述： | 200V , 20Amp, N-Channel MOSFET(200V ,20 A，N沟道MOS场效应管) |
| 中文描述： | 为200V，20Amp，N通道MOSFET（为200V，20膫n沟道马鞍山场效应管） |
| 文件页数： | 3/4页 |
| 文件大小： | 41K |
| 代理商： | COM250A |
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
STATIC P/N COM350A
Parameter
Min.
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
STATIC P/N COM450A
Parameter
Min. Typ. Max. Units Test Conditions
Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
V
V
G S
= 0,
I
D
= 250
m
A
V
DS
= V
G S
,I
D
= 250
m
A
V
G S
= +20 V
V
G S
= - 20 V
V
DS
= Max. Rat., V
G S
= 0
V
DS
= 0.8 Max. Rat., V
G S
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
G S
= 10 V
BV
DSS
Drain-Source Breakdown
500
V
V
G S
= 0,
I
D
= 250
m
A
V
DS
= V
G S
,I
D
= 250
m
A
V
G S
= +20 V
V
G S
= - 20 V
V
DS
= Max. Rat., V
G S
= 0
V
DS
= 0.8 Max. Rat., V
G S
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
G S
= 10 V
Voltage
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
2.0
4.0
V
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
2.0
4.0
V
Gate-Body Leakage Forward
100
nA
Gate-Body Leakage Forward
100
nA
Gate-Body Leakage Reverse
- 100
nA
Gate-Body Leakage Reverse
- 100
nA
Zero Gate Voltage Drain
0.1
0.25
m A
Zero Gate Voltage Drain
0.1
0.25
m A
Current
0.2
1.0
m A
Current
0.2
1.0
m A
I
D(on)
V
DS(on)
On-State Drain Current
1
15
A
I
D(on)
V
DS(on)
On-State Drain Current
1
13
A
Static Drain-Source On-State
2.0
2.64
V
V
G S
= 10 V, I
D
= 8.0 A
Static Drain-Source On-State
2.1
2.94
V
V
G S
= 10 V, I
D
= 7.0 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.25
.32
V
G S
= 10 V, I
D
= 8.0 A
R
DS(on)
Static Drain-Source On-State
0.3
0.42
V
G S
= 10 V, I
D
= 7.0 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
0.51 0.67
V
G S
= 10 V, I
D
= 8.0 A,
T
C
= 125 C
R
DS(on)
Static Drain-Source On-State
0.67
0.89
V
G S
= 10 V, I
D
= 7.0 A,
T
C
= 125 C
Resistance
1
Resistance
1
DYNAMIC
DYNAMIC
g
f
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
6.0
S
(
W
)
V
DS
2 V
DS(on)
,I
D
= 8.0 A
pF
V
G S
= 0
pF
V
DS
= 25 V
pF
f = 1 MHz
g
f
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
6.0
S
(
W
)
V
DS
2 V
DS(on)
,I
D
= 7.0 A
pF
V
G S
= 0
pF
V
DS
= 25 V
pF
f = 1 MHz
Input Capacitance
2900
Input Capacitance
2600
Output Capacitance
450
Output Capacitance
280
Reverse Transfer Capacitance
150
Reverse Transfer Capacitance
40
Turn-On Delay Time
30
ns
V
D D
= 200 V, I
D
@
8.0 A
R
g
=5.0
W
, V
G S
=10V
(MOSFET switching times are
essentially independent of
operating temperature.)
Turn-On Delay Time
30
ns
V
D D
= 210 V, I
D
@
7.0 A
R
g
= 5.0
W
, V
G S
= 10 V
(MOSFET switching times are
essentially independent of
operating temperature.)
Rise Time
40
ns
Rise Time
46
ns
Turn-Off Delay Time
80
ns
Turn-Off Delay Time
75
ns
Fall Time
30
ns
Fall Time
31
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 15
A
Modified MOSPOWER
I
S
Continuous Source Current
- 13
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
S M
Source Current
1
- 60
A
the integral P-N
I
S M
Source Current
1
- 52
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
- 1.6
V
T
C
= 25 C, I
S
= -15 A, V
G S
= 0
T
J
= 100 C, I
F
= I
S
,
d
F
/ds = 100 A/
m
s
V
SD
Diode Forward Voltage
1
- 1.4
V
T
C
= 25 C, I
S
= -13 A, V
G S
= 0
T
J
= 150 C, I
F
= I
S
,
d
F
/ds = 100 A/
m
s
t
r
Reverse Recovery Time
600
ns
t
r
Reverse Recovery Time
700
ns
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
3
C
3
G
D
S
G
D
S
(
)
(
)
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