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参数资料
| 型号： | COM340T |
| 英文描述： | 400V , 10Amp, N-Channel MOSFET(400V , 10 A，N沟道MOS场效应管) |
| 中文描述： | 为400V，10Amp，N通道MOSFET（为400V，10膫n沟道马鞍山场效应管） |
| 文件页数： | 2/4页 |
| 文件大小： | 41K |
| 代理商： | COM340T |
3
C
3
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N COM140T
Parameter
Min.
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N COM240T
Parameter
Min. Typ. Max. Units Test Conditions
Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
V
G S
= 0,
I
D
= 250
m
A
V
DS
= V
G S
,I
D
= 250
m
A
V
G S
= 20 V
V
G S
= - 20 V
V
DS
= Max. Rat., V
G S
= 0
V
DS
= 0.8 Max. Rat., V
G S
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
G S
= 10 V
V
G S
= 10 V, I
D
= 15 A
BV
DSS
Drain-Source Breakdown
200
V
V
G S
= 0,
I
D
= 250
m
A
V
DS
= V
G S,
I
D
= 250
m
A
V
G S
= 20 V
V
G S
= - 20 V
V
DS
= Max. Rat., V
G S
= 0
V
DS
= 0.8 Max. Rat., V
G S
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
G S
= 10 V
V
G S
= 10 V, I
D
= 10 A
Voltage
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
2.0
4.0
V
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
2.0
4.0
V
Gate-Body Leakage Forward
100
nA
Gate-Body Leakage Forward
100
nA
Gate-Body Leakage Reverse
-100
nA
Gate-Body Leakage Reverse
- 100
nA
Zero Gate Voltage Drain
0.1
0.25
m A
Zero Gate Voltage Drain
0.1
0.25
m A
Current
0.2
1.0
m A
Current
0.2
1.0
m A
I
D(on)
V
DS(on)
On-State Drain Current
1
14
A
I
D(on)
V
DS(on)
On-State Drain Current
1
14
A
Static Drain-Source On-State
1.40 1.73
V
Static Drain-Source On-State
1.8
2.1
V
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
.12
V
G S
= 10 V, I
D
= 15 A
R
DS(on)
Static Drain-Source On-State
0.21
V
G S
= 10 V, I
D
= 10 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
.22
V
G S
= 10 V, I
D
= 15 A,
T
C
= 125 C
R
DS(on)
Static Drain-Source On-State
0.41
V
G S
= 10 V, I
D
= 10 A,
T
C
= 125 C
Resistance
1
Resistance
1
DYNAMIC
DYNAMIC
g
f
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
10
S
(
W
)
V
DS
2 V
DS(on)
,I
D
= 15 A
pF
V
G S
= 0
pF
V
DS
= 25 V
pF
f = 1 MHz
g
f
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
6.0
S
(
W
)
V
DS
2 V
DS(on)
,I
D
= 10 A
pF
V
G S
= 0
pF
V
DS
= 25 V
pF
f = 1 MHz
Input Capacitance
1275
Input Capacitance
1000
Output Capacitance
550
Output Capacitance
250
Reverse Transfer Capacitance
160
Reverse Transfer Capacitance
100
Turn-On Delay Time
16
ns
V
D D
= 30 V, I
D
@
5 A
R
g
= 5
W
, V
G S
=10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Turn-On Delay Time
17
ns
V
D D
=75 V, I
D
@
18 A
R
g
=5
W
, V
G S
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Rise Time
19
ns
Rise Time
52
ns
Turn-Off Delay Time
42
ns
Turn-Off Delay Time
36
ns
Fall Time
24
ns
Fall Time
30
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 27
A
Modified MOSPOWER
I
S
Continuous Source Current
- 18
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
S M
Source Current
1
- 108
A
the integral P-N
I
S M
Source Current
1
- 72
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
t
r
Diode Forward Voltage
1
- 2.0
V
T
C
= 25 C, I
S
= -24 A, V
G S
= 0
T
J
= 150 C,I
F
= I
S
,
d
F
/ds = 100 A/
m
s
V
SD
t
r
Diode Forward Voltage
1
-1.5
V
T
C
= 25 C, I
S
= -18 A, V
G S
= 0
T
J
= 150 C,I
F
= I
S
,
d
F
/ds = 100 A/
m
s
Reverse Recovery Time
200
ns
Reverse Recovery Time
350
ns
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
)
(
)
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