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参数资料
| 型号： | COM350A |
| 英文描述： | 400V , 12Amp, N-Channel MOSFET(400V ,12A，N沟道MOS场效应管) |
| 中文描述： | 为400V，12Amp，N通道MOSFET（为400V，12A条，?沟道马鞍山场效应管） |
| 文件页数： | 4/4页 |
| 文件大小： | 41K |
| 代理商： | COM350A |
COM150A - COM450A
3.1
205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Parameter
COM150A
COM250A
COM350A
COM450A
Units
V
DS
Drain-Source Voltage
100
200
400
500
V
V
DGR
Drain-Gate Voltage (R
G S
= 1 M )
100
200
400
500
V
I
D
@ T
C
= 25°C
Continuous Drain Current
2
±25
±25
±13
±11
A
I
D
@ T
C
= 100°C
Continuous Drain Current
2
±16
±16
±8
±7
A
I
D M
Pulsed Drain Current
1
±100
±80
±54
±40
A
V
G S
Gate-Source Voltage
± 20
± 20
±20
± 20
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation
125
125
125
125
W
P
D
@ T
C
= 100°C
Maximum Power Dissipation
50
50
50
50
W
Junction To Case
Linear Derating Factor
1.0
1.0
1.0
1.0
W/°C
Junction To Ambient
Linear Derating Factor
.020
.020
.020
.020
W/°C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Lead Temperature
(1/16" from case for 10 secs.)
300
300
300
300
°C
1Pulse Test: Pulse width 300 μsec. Duty Cycle 2%.
2Package Pin Limitation = 15 Amps
THERMAL RESISTANCE
R
thJC
Junction-to-Case
1.0
°C/W
R
thJA
Junction-to-Ambient
50
°C/W Free Air Operation
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
MECHANICAL OUTLINE
1
2
3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
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