参数资料
型号: COP8SGA628M9
厂商: National Semiconductor Corporation
英文描述: LMH6505 Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier; Package: MINI SOIC; No of Pins: 8
中文描述: 8位的CMOS基于ROM和OTP微控制器具有8K到32K的内存,2个比较器和USART
文件页数: 7/62页
文件大小: 913K
代理商: COP8SGA628M9
3.0 Electrical Characteristics
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 2)
Supply Voltage (V
CC
)
Voltage at Any Pin
Total Current into V
CC
Pin (Source)
7V
0.3V to V
CC
+0.3V
100 mA
Total Current out of
GND Pin (Sink)
Storage Temperature
Range
ESD Protection Level
110 mA
65C to +140C
2kV (Human Body
Model)
Note 2:
Absolute maximum ratings indicate limits beyond which damage to
the device may occur. DC and AC electrical specifications are not ensured
when operating the device at absolute maximum ratings.
DC Electrical Characteristics
40C
T
A
+85C unless otherwise specified.
Parameter
Operating Voltage
Power Supply Rise Time
V
CC
Start Voltage to Guarantee POR
Power Supply Ripple (Note 4)
Supply Current (Note 5)
CKI = 15 MHz
CKI = 10 MHz
CKI = 4 MHz
HALT Current (Note 6)
IDLE Current (Note 5)
CKI = 15 MHz
CKI = 10 MHz
CKI = 4 MHz
Input Levels (V
IH
, V
IL
)
RESET
Logic High
Logic Low
CKI, All Other Inputs
Logic High
Logic Low
Internal Bias Resistor for the
Crystal/Resonator Oscillator
CKI Resistance to V
CC
or GND when R/C
Oscillator is selected
Hi-Z Input Leakage
Input Pullup Current
G and L Port Input Hysteresis
Conditions
Min
2.7
10
0
Typ
Max
5.5
50 x 10
6
0.25
0.1 V
cc
Units
V
ns
V
V
Peak-to-Peak
V
CC
= 5.5V, t
C
= 0.67 μs
V
CC
= 5.5V, t
C
= 1 μs
V
CC
= 4.5V, t
C
= 2.5 μs
V
CC
= 5.5V, CKI = 0 MHz
9.0
6.0
2.1
10
mA
mA
mA
μA
<
4
V
CC
= 5.5V, t
C
= 0.67 μs
V
CC
= 5.5V, t
C
= 1 μs
V
CC
= 4.5V, t
C
= 2.5 μs
2.25
1.5
0.8
mA
mA
mA
0.8 V
cc
V
V
0.2 V
cc
0.7 V
cc
V
V
0.2 V
cc
2
0.5
1
M
V
CC
= 5.5V
5
8
11
k
V
CC
= 5.5V
V
CC
= 5.5V, V
IN
= 0V
V
CC
= 5.5V
2
40
+2
250
μA
μA
V
0.25 V
cc
C
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