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| 型号： | CPC7592BA |
| 厂商： | CLARE INC |
| 元件分类： | 通信及网络 |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PDSO16 |
| 封装： | ROHS COMPLIANT, SOIC-16 |
| 文件页数： | 8/20页 |
| 文件大小： | 588K |
| 代理商： | CPC7592BA |
CPC7592
16
www.clare.com
R03
conducted through the diode bridge to ground via
FGND. Voltage is clamped to a diode drop above
ground. During a negative transient of 2 to 4 V more
negative than the voltage source at VBAT, the SCR
conducts and faults are shunted to FGND via the SCR
or the diode bridge.
In order for the SCR to crowbar (or foldback), the
SCR’s on-voltage (see “Protection Circuitry Electrical
Specifications” on page 9) must be less than the
applied voltage at the VBAT pin. If the VBAT voltage is
less negative than the SCR on-voltage or if the VBAT
supply is unable to source the trigger current, the SCR
will not crowbar.
For power induction or power-cross fault conditions,
the positive cycle of the transient is clamped to a diode
drop above ground and the fault current directed to
ground. The negative cycle of the transient will cause
the SCR to conduct when the voltage exceeds the
VBAT reference voltage by two to four volts, steering
the fault current to ground.
Note: The CPC7592xB does not contain the
protection SCR but instead uses diodes to clamp both
polarities of a transient fault. These diodes direct the
negative potential’s fault current to the VBAT pin.
2.9.2 Current Limiting function
If a lightning strike transient occurs when the device is
in the talk state, the current is passed along the line to
the integrated protection circuitry and restricted by the
dynamic current limit response of the active switches.
During the talk state, when a 1000V 10x1000
μs
lightning pulse (GR-1089-CORE) is applied to the line
though a properly clamped external protector, the
current seen at TLINE and RLINE will be a pulse with a
typical magnitude of 2.5 A and a duration less than
0.5
μs.
If a power-cross fault occurs with the device in the talk
state, the current is passed though break switches
SW1 and SW2 on to the integrated protection circuit
but is limited by the dynamic DC current limit response
of the two break switches. The DC current limit
specified over temperature is between 80 mA and
425 mA and the circuitry has a negative temperature
coefficient. As a result, if the device is subjected to
extended heating due to a power cross fault condition,
the measured current at TLINE and RLINE will decrease
as the device temperature increases. If the device
temperature rises sufficiently, the temperature
shutdown mechanism will activate and the device will
enter the all-off state.
2.10 Thermal Shutdown
The thermal shutdown mechanism activates when the
device die temperature reaches a minimum of 110
° C,
placing the device in the all-off state regardless of
logic input. During thermal shutdown events the TSD
pin will output a logic low with a nominal 0 V level. A
logic high is output from the TSD pin during normal
operation with a typical output level equal to VDD.
If presented with a short duration transient such as a
lightning event, the thermal shutdown feature will
typically not activate. But in an extended power-cross
event, the device temperature will rise and the thermal
shutdown mechanism will activate forcing the switches
to the all-off state. At this point the current measured
into TLINE or RLINE will drop to zero. Once the device
enters thermal shutdown it will remain in the all-off
state until the temperature of the device drops below
the de-activation level of the thermal shutdown circuit.
This permits the device to autonomously return to
normal operation. If the transient has not passed,
current will again flow up to the value allowed by the
dynamic DC current limiting of the switches and
heating will resume, reactivating the thermal shutdown
mechanism. This cycle of entering and exiting the
thermal shutdown mode will continue as long as the
fault condition persists. If the magnitude of the fault
condition is great enough, the external secondary
protector will activate shunting the fault current to
ground.
2.11 External Protection Elements
The CPC7592 requires only over voltage secondary
protection on the loop side of the device. The
integrated protection feature described above negates
the need for additional external protection on the SLIC
side. The secondary protector must limit voltage
transients to levels that do not exceed the breakdown
voltage or input-output isolation barrier of the
CPC7592. A foldback or crowbar type protector is
recommended to minimize stresses on the CPC7592.
Consult Clare’s application note, AN-100, “Designing
State Subscriber Line Interfaces” for equations related
to the specifications of external secondary protectors,
fused resistors and PTCs.
相关PDF资料 |
PDF描述 |
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| CPC7592BBTR | |
| CPC7593ZA | |
| CPC7593ZATR | |
| CPC7593BCTR | |
| CPC7593MB | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CPC7592BATR | 功能描述:固态继电器-PCB安装 6-pole SOIC LCAS, T/R RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC7592BB | 功能描述:固态继电器-PCB安装 6-pole, no SCR, SOIC LCAS RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC7592BBTR | 功能描述:固态继电器-PCB安装 6-pole, no SCR, SOIC LCAS, T/R RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC7592BC | 功能描述:固态继电器-PCB安装 6-pole, extra logic, SOIC LCAS RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| CPC7592BCTR | 功能描述:固态继电器-PCB安装 6-pole, extra logic, SOIC LCAS, T/R RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
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