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参数资料
| 型号： | CPC7594MBTR |
| 厂商： | CLARE INC |
| 元件分类： | 通信及网络 |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PDSO16 |
| 封装： | ROHS COMPLIANT, DFN-16 |
| 文件页数： | 20/20页 |
| 文件大小： | 596K |
| 代理商： | CPC7594MBTR |
CPC7594
R03
www.clare.com
9
1.7 Digital I/O Electrical Specifications
1.8 Voltage and Power Specifications
Parameter
Test Conditions
Symbol
Minimum
Typical
Maximum
Unit
Input Characteristics
Input voltage, Logic low
Input voltage falling
VIL
0.8
1.0
-
V
Input voltage, Logic high
Input voltage rising
VIH
1.7
2.0
Input leakage current,
INRINGING and INTEST,
Logic high
VDD = 5.5 V, VBAT = -75 V, VHI =2.4 V
IIH
-0.1
1
μA
Input leakage current,
INRINGING and INTEST,
Logic low
VDD = 5.5 V, VBAT = -75 V, VIL = 0.4 V
IIL
-0.1
1
μA
Input leakage current,
LATCH Logic high
VDD = 4.5 V, VBAT = -75 V, VIH = 2.4 V
IIH
719
-
μA
LATCH Pull-up
Minimum Load
VDD = 4.5 V, VBAT = -75 V, IIN = -10 μA
Latch input transitions to logic high.
Logic = High
True
Input leakage current,
LATCH Logic low
VDD = 5.5 V, VBAT = -75 V, VIL = 0.4 V
IIL
-
46
125
μA
Input leakage current,
TSD Logic high
VDD = 5.5 V, VBAT = -75 V, VIH = 2.4 V
IIH
10
16
30
μA
Input leakage current,
TSD Logic low
VDD = 5.5 V, VBAT = -75 V, VIL = 0.4 V
IIL
10
16
30
μA
Output Characteristics
Output voltage,
TSD Logic high
VDD = 5.5 V, VBAT = -75 V, ITSD = 10μAVTSD_off
2.4
VDD
-V
Output voltage,
TSD Logic low
VDD = 5.5 V, VBAT = -75 V, ITSD = 1mA
VTSD_on
-0
0.4
V
Parameter
Test Conditions
Symbol
Minimum
Typical
Maximum
Unit
Voltage Requirements
VDD
-
VDD
4.5
5.0
5.5
V
VBAT
1
-
VBAT
-19
-48
-72
V
1V
BAT is used only for internal protection circuitry. If VBAT rises above-10 V, the device will enter the all-off state and will remain in the all-off state until the battery
drops below approximately -15 V
Power Specifications
Power consumption
VDD = 5 V, VBAT = -48 V,
Measure IDD and IBAT,
Talk and All-Off States
P
-
5.5
10
mW
All other states
P
-
6.5
10
mW
VDD current
VDD = 5 V, VBAT = -48 V
Talk and All-Off states
IDD
1.1
2.0
mA
Ringing and Test states
IDD
-1.3
2.0
mA
VBAT current
VDD = 5 V, VBAT = -72 V, All states
IBAT
-0.1
10
μA
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