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参数资料
| 型号： | CPH5826 |
| 厂商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 中文描述： | MOSFET的：N沟道MOSFET的硅SBD智能交通：肖特基二极管通用开关设备 |
| 文件页数： | 2/5页 |
| 文件大小： | 60K |
| 代理商： | CPH5826 |
CPH5826
No.7786-2/5
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
IS=3A, VGS=0
20
V
μ
A
μ
A
V
S
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
1
±
10
1.3
0.4
3.0
4.9
48
58
72
280
60
38
13
35
35
25
8.8
0.85
0.85
0.82
63
82
110
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
1.2
VR
VF
IR
C
trr
IR=300
μ
A
IF=700mA
VR=15V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
30
V
V
μ
A
pF
ns
0.55
80
25
10
Package Dimensions
unit : mm
2171
Electrical Connection
1
0
0
2
0
2.9
0.05
0.4
0.95
0
0
0
0.15
0.4
1
2
3
4
5
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPH5831 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| CPH5831-TL-E | 制造商:SANYO 功能描述:Nch+SBD 20V 3A CPH5 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SOT346 制造商:Sanyo 功能描述:0 |
| CPH5835 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5835_07 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5838 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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