参数资料
型号: CPH5855
厂商: Sanyo Electric Co.,Ltd.
英文描述: MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
中文描述: MOSFET的:N沟道MOSFET的硅SBD智能交通:肖特基二极管通用开关设备
文件页数: 2/6页
文件大小: 74K
代理商: CPH5855
CPH5855
No. A0670-2/6
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
15
15
1
3
V
V
A
A
°
C
°
C
50Hz sine wave, 1 cycle
--55 to +125
--55 to +125
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=
±
8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=2.5A
VDS=10V, VGS=4V, ID=2.5A
VDS=10V, VGS=4V, ID=2.5A
IS=2.5A, VGS=0V
20
V
μ
A
μ
A
V
S
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
1
±
10
1.3
0.4
1.8
3.0
71
89
117
220
56
43
8.0
44
28
37
2.9
0.45
0.97
0.83
93
Static Drain-to-Source On-State Resistance
125
180
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
1.2
VR
VF1
VF2
IR
C
trr
IR=0.5mA
IF=0.3A
IF=0.5A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
15
V
V
V
μ
A
pF
ns
Forward Voltage
0.31
0.34
0.34
0.37
90
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
20
10
Package Dimensions
unit : mm (typ)
7017A-005
Electrical Connection
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
2
1
4
5
3
2.9
0.05
0.4
2
1
0
0
0
0
0
0.15
0.95
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
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